Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool

Naulleau, Patrick; Anderson, Christopher N.; Chiu, Jerrin; Dean, Kim; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Hoef, Brian; Jones, Gideon; Koh, Chawon; Fontaine, Bruno La; Ma, Anna; Montgomery, Warren; Niakoula, Dimitra; Park, Joo-On; Wallow, Tom; Wurm, Stefan

doi:10.1116/1.3043473

Cited by 20 publications

(19 citation statements)

References 22 publications

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“…[2][3] Recent works in EUV photoresist development has highlighted that substrate materials play a critical role in affecting imaging performance and can improve LER, resolution, and process window. [4][5] In this paper, LER evolution along the resist sidewalls of ultra-thin film EUV resists is studied. It was previously reported by Foucher that LER both increases and becomes less isotropic as the resist sidewall approaches the substrate interface.…”

Section: Introductionmentioning

confidence: 99%

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

et al. 2010

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Line edge roughness evolutions in EUV resist patterns are investigated. Three dimensional scanning electron microscopy images show the pattern sidewall roughness to be highly anisotropic and the roughness to be propagating from the resistsubstrate interface up the resist pattern sidewall. In ultrathin resist films, (film thickness ca. 100 nm and below) roughness is found to be fully correlated from the resist-substrate interface to the resist-air interface. This behavior is seen regardless of the resist platforms being used.Underlayer stack roughness contributions to the pattern sidewall roughness leading to resist LER were examined and no correlations between the two were found. At the same time, the chemical properties of the underlayer stacks are shown to have strong influences on the resist roughness and process performance. Exact mechanisms behind this are not clearly understood at present.

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Section: Introductionmentioning

confidence: 99%

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

et al. 2010

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“…[44][45][46][47] However, it cannot be reduced below a certain value (3-4 nm) when exposure dose is increased. 50,51) A common explanation of this lower limit of LER upon high-dose exposure is that it is of material origin, namely, it is associated with the molecular size and/ or high-order interaction of polymers. On the basis of this idea, molecular glass resists have been intensively investigated.…”

Section: Limit Of Lermentioning

confidence: 99%

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

161

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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“…The MET uses programmable coherence illumination 16 and provides imaging capabilities down to 12 nm, enabling advanced resist, mask, process, and metrology methods development. Further details on the MET can be found in the literature 17 .…”

Section: Oob Exposures At the Micro-exposure Toolmentioning

confidence: 99%

Assessing out-of-band flare effects at the wafer level for EUV lithography

et al. 2010

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To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

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Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool

Cited by 20 publications

References 22 publications

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

Resist Materials and Processes for Extreme Ultraviolet Lithography

Assessing out-of-band flare effects at the wafer level for EUV lithography

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