Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

Li, Henan; Li, Peng; Huang, Jing; Li, Ming Yang; Yang, Chih Wen; Shi, Yumeng; Zhang, Xixiang; Li, Lain‐Jong

doi:10.1021/acsnano.6b06496

Cited by 53 publications

(49 citation statements)

References 44 publications

(71 reference statements)

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“…The vdW interactions between the adjacent layers at the interface are weak, while their electron orbitals extend to each other and affect the electronic band structures in each layer . The interlayer coupling between two vdW‐stacked 2D layers can be modulated from noninteraction to strong interaction, resulting in novel physical properties.…”

Section: Energy Band Alignments Of Vdwhsmentioning

confidence: 99%

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Zhou

Jing

et al. 2018

Adv Funct Materials

321

217

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Van der Waals heterostructures (vdWHs) based on 2D layered materials with selectable materials properties pave the way to integration at the atomic scale, which may give rise to fresh heterostructures exhibiting absolutely novel physics and versatility. This feature article reviews the state-of-the-art research activities that focus on the 2D vdWHs and their optoelectronic applications. First, the preparation methods such as mechanical transfer and chemical vapor deposition growth are comprehensively outlined. Then, unique energy band alignments generated in 2D vdWHs are introduced. Furthermore, this feature article focuses on the applications in light-emitting diodes, photodetectors, and optical modulators based on 2D vdWHs with novel constructions and mechanisms. The recently reported novel constructions of the devices are introduced in three primary aspects: light-emitting diodes (such as single defect light-emitting diodes, circularly polarized light emission arising from valley polarization), photodetectors (such as photo-thermionic, tunneling, electrolyte-gated, and broadband photodetectors), and optical modulators (such as graphene integrated with silicon technology and graphene/hexagonal boron nitride (hBN) heterostructure), which show promising applications in the nextgeneration optoelectronics. Finally, the article provides some conclusions and an outlook on the future development in the field.WSe 2 /MoS 2 along the [001] zone axis in Figure 1c demonstrates that in this specific hetero-bilayer structure, the two hexagonal reciprocal lattices are rotated by 12.5° with respect to each layer without obvious lattice strain, resulting in moiré fringes with a spatial periodicity on the order of four to six times the lattice constants of each layer. [76] The atomically sharp interface of the heterostructure can be obtained by this stacking process confirmed by the high-resolution cross-sectional scanning transmission electron microscope image of the heterostructure (Figure 1d). Furthermore, the complex 2D vdWHs with more stacking layers can be realized by this mechanical transfer process.Mechanical transfer process provides a lot of flexibility in constructing diverse 2D vdWHs with various materials which may give rise to fresh physical properties, it is not scalable, which is imperative for further practical applications in electronics and optoelectronics. Alternatively, the bottom-up method such as direct CVD synthesis of 2D vdWHs has been successful in synthesizing graphene-or transition metal dichalcogenide (TMD)-based vdWHs, [77][78][79] which shows promising applications in scalable production. CVD GrowthCVD growth has shown booming development in the last decades such as the CVD growth of graphene [80,81] and TMDs, [82,83] and has been employed for synthesizing 2D vdWHs recently. [84] The most used method for CVD growth of 2D vdWHs is that evaporating the target sources such as WS 2 , WSe 2 , MoS 2 , MoSe 2 . Xu and co-workers [65] employed the mixture of WSe 2 and MoSe 2 powder as sources and obtained ...

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Section: Energy Band Alignments Of Vdwhsmentioning

confidence: 99%

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Zhou

Jing

et al. 2018

Adv Funct Materials

321

217

View full text Add to dashboard Cite

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“…However, some transition metal hybrid interfaces were found with a transition width of several lattice constants . In the two‐step strategy (Figure (b)), one sort of TMD film is synthesized first and then patterned by focused ion beam or covered by WO 3− x layer for protection sometimes. Afterwards, heteroepitaxy of the second sort of TMD occurs along the exposed edge of the pre‐synthesized TMD film.…”

Section: Experimental Synthesis and Growth Controlmentioning

confidence: 99%

Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

Zhao

Cheng

Han

et al. 2017

WIREs Comput Mol Sci

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Two‐dimensional (2D) lateral heterostructures open a new avenue for intentional design of novel 2D devices with superior electronic and optoelectronic properties. Since 2012, many groups have successfully synthesized lateral graphene/h‐BN heterostructures on metal substrates and the fabrication of in‐plane heterostructures of transition metal dichalcogenides has also been reported since 2014. In this review, we first present an overview on recent progress of the experimental fabrications of 2D lateral heterostructures, along with the growth mechanism from atomistic simulations. The atomic structures of interfaces, electronic and thermal transport properties across interfaces for some 2D lateral heterojunctions are then discussed. Our current theoretical understanding on the band alignments and electronic properties as well as potential device applications of these lateral heterostructures are summarized. Finally, we give a perspective on this fast‐growing field. WIREs Comput Mol Sci 2018, 8:e1353. doi: 10.1002/wcms.1353 This article is categorized under: Structure and Mechanism > Computational Materials Science

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“…A similar strategy can also be coupled with lithographic processes to pattern these heterojunction flakes. For example, the initially grown TMDC monolayer can be patterned by lithography, such as ion beam etching, followed by the growth of a second TMDC monolayer to adjust the etched area seamlessly …”

Section: Heterostructure Light‐emitting Devicesmentioning

confidence: 99%

Monolayer Transition Metal Dichalcogenides as Light Sources

Takenobu

2018

Advanced Materials

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Reducing the dimensions of materials is one of the key approaches to discovering novel optical phenomena. The recent emergence of 2D transition metal dichalcogenides (TMDCs) has provided a promising platform for exploring new optoelectronic device applications, with their tunable electronic properties, structural controllability, and unique spin valley-coupled systems. This progress report provides an overview of recent advances in TMDC-based light-emitting devices discussed from several aspects in terms of device concepts, material designs, device fabrication, and their diverse functionalities. First, the advantages of TMDCs used in light-emitting devices and their possible functionalities are presented. Second, conventional approaches for fabricating TMDC light-emitting devices are emphasized, followed by introducing a newly established, versatile method for generating light emission in TMDCs. Third, current growing technologies for heterostructure fabrication, in which distinct TMDCs are vertically stacked or laterally stitched, are explained as a possible means for designing high-performance light-emitting devices. Finally, utilizing the topological features of TMDCs, the challenges for controlling circularly polarized light emission and its device applications are discussed from both theoretical and experimental points of view.

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Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

Cited by 53 publications

References 44 publications

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

Monolayer Transition Metal Dichalcogenides as Light Sources

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