Monolayer Transition Metal Dichalcogenides as Light Sources

Pu, Jiang; Takenobu, Taishi

doi:10.1002/adma.201707627

Cited by 85 publications

(79 citation statements)

References 208 publications

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“…Ambipolar LETs based on 2D materials (especially transition‐metal dichalcogenides) have also attracted widespread attention due to their unique optoelectronic characteristics . Monolayer TMDs possess direct energy gap with adjustable light‐emitting characteristics and generate light emission depending on closely combined excitons on account of improved Coulomb interactions .…”

Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

“…Monolayer MoS 2 , WSe 2 as well as several other TMDs both show circularly polarized photoluminescence . To achieve spin‐valley light‐emitting transistors, regulating the number of polarized charges in each valley to interconvert valley polarization to emitted or absorbed photons is crucial . Up to now, two methods are typically utilized for fabricating chiral light‐emitting devices based on TMDs.…”

Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

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Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

169

139

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Ambipolar transistors represent a class of transistors where positive (holes) and negative (electrons) charge carriers both can transport concurrently within the semiconducting channel. The basic switching states of ambipolar transistors are comprised of common off-state and separated on-state mainly impelled by holes or electrons. During the past years, diverse materials are synthesized and utilized for implementing ambipolar charge transport and their further emerging applications comprising ambipolar memory, synaptic, logic, and light-emitting transistors on account of their special bidirectional carrier-transporting characteristic. Within this review, recent developments of ambipolar transistor field involving fundamental principles, interface modifications, selected semiconducting material systems, device structures, ambipolar characteristics, and promising applications are highlighted. The existed challenges and prospective for researching ambipolar transistors in electronics and optoelectronics are also discussed. It is expected that the review and outlook are well timed and instrumental for the rapid progress of academic sector of ambipolar transistors in lighting, display, memory, as well as neuromorphic computing for artificial intelligence.

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Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

169

139

View full text Add to dashboard Cite

show abstract

“…As semiconductors in field‐effect transistors they exhibit high charge carrier mobilities (>200 cm 2 V −1 s −1 ) for electrons but also for holes under appropriate conditions . The ambipolar charge transport combined with efficient light absorption and reasonably good PL from the visible to the near‐infrared should enable a range of optoelectronic applications based on monolayer TMDs including electroluminescent devices …”

Section: Lateral Single Layer and Ambipolar Lefetsmentioning

confidence: 99%

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Zaumseil

2019

Adv Funct Materials

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Light-emitting field-effect transistors (LEFETs) combine switching and amplification with light emission and thus represent an interesting optoelectronic device. They are not limited anymore to a few examples and specific materials but are nearly universal for a wide range of semiconductors, from organic to inorganic and nanoscale. This review introduces the basic working principles of lateral unipolar and ambipolar LEFETs and discusses recent examples based on various solution-processed semiconducting materials. Applications beyond simple light emission are presented and possible future directions for lightemitting transistors with added functionalities are outlined. The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201905269.thus excluding vertical LEFETs, which have been demonstrated for some organic emitter systems. [5][6][7] We will start with LEFETs that do not rely on the injection of both holes and electrons in a single semiconducting layer but show unipolar charge transport and may include multiple semiconducting layers. This short section will be followed by an overview of truly ambipolar single-layer LEFETs, the different possible working principles and various emissive semiconductors with their advantages and drawbacks. The review will conclude with recent examples of LEFET applications that go beyond simple light-emission and take advantage of specific device properties to add functionalities that are difficult to achieve with other optoelectronic devices.

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“…Two-dimensional semiconductor transition metal dichalcogenides (TMDCs) have sparked immense efforts for their applications in next-generation optoelectronic and electronic devices, such as light-emitting diodes (LEDs), eld-effect transistors (FETs), solar cells and photodetectors, due to their unique optical and electrical properties. [1][2][3][4][5][6][7][8][9] The excitons in the TMDCs can be formed via the recombination of photo-excited electron-hole pairs based on the attractive coulombic interactions. 10 The formed excitons can radiatively decay to the ground state accompanied by the emission of light.…”

Section: Introductionmentioning

confidence: 99%