Lateral-Transistor Test Structures for Evaluating the Effectiveness of Surface Doping Techniques

(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

“…In the 700ºC PureB diodes the actual doping of the Si-substrate is very limited by the low solid solubility and diffusivity of the B and gives a contribution to G E of about 10 12 atm/cm 2 , as is documented in [6]. In diodes that are formed solely by such a doping of the Sisubstrate, the total current would approach Schottky-diode-like values and abnormalities often appear in the I-V characteristics due to depletion of this the thin, lightly-doped pregion [12]. From the figures it is seen that the PureB current levels are decades lower than those of the corresponding Schottky diode and they decrease somewhat as the deposition time, i.e.…”

Low temperature pure boron layer deposition for Si diode and micromachining applications

“…In this way, a highly-doped yet very shallow junction could be achieved. For example, in [62][63][64] a monolayer of CVD arsenic deposited on a p-type substrate was exposed to 308-nm excimer laser annealing with energy densities from 600 to 1200 mJ/cm 2 . The resulting junctions were contacted by Al/Si (1%) sputtering and diode I-V characteristics going from Schottky-like current levels to deep-junction-like levels were obtained as shown in Fig.…”

“…This was shown in simulations to pull down the barrier to holes normally set by the built-in voltage of the n + p junction because the depletion in the metal/n-Si/p-Si junction then terminates at the metal instead of in the n + -region. I-V characteristics for diodes that were either not annealed, or annealed at 900 mJ/cm 2 or 1200 mJ/cm 2 [62,63].…”

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

“…The observed lower I D−1 in the series resistance regime for both diodes in Fig. 3.14(a)-(b) is due to the high resistance encountered during parallel mode operation [154,155].…”

“…To study the influence of minority carrier injection in a high-φ b diode, a prior reported 2-diode method [154,155] was adopted. With this technique, it is possible to distinguish the operation of a (Schottky based) shallow p-n like junction diode from that of a conventional Schottky diode at low injection.…”