Lateral positioning of InGaAs quantum dots using a buried stressor

Strittmatter, A.; Schliwa, A.; Schulze, Jan-Hindrik; Germann, Tim David; Dreismann, A.; Hitzemann, O.; Stock, E.; Остапенко, І. А.; Rodt, Sven; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V. A.

doi:10.1063/1.3691251

Cited by 32 publications

(18 citation statements)

References 16 publications

(14 reference statements)

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“…To better control the coupling behavior and the gain contribution of a single resonant emitter, integrating a single self-assembled QD into a high-quality microcavity will be interesting in further optimizations. However, this integration is a complicated task that requires sophisticated techniques, such as site-controlled growth [11][12][13][14][15] or in situ lithography [16][17][18]. Deterministically-positioned QDs have been successfully applied in the past to realize high-quality single-photon sources [19,20], but up until now have not been demonstrated to provide sufficient optical gain to reach the lasing threshold in a single-QD device.…”

Section: Introductionmentioning

confidence: 99%

Controlling the gain contribution of background emitters in few-quantum-dot microlasers

et al. 2018

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We provide experimental and theoretical insight into single-emitter lasing effects in a quantum dot (QD)-microlaser under controlled variation of background gain provided by off-resonant discrete gain centers. For that purpose, we apply an advanced two-color excitation concept where the background gain contribution of off-resonant QDs can be continuously tuned by precisely balancing the relative excitation power of two lasers emitting at different wavelengths. In this way, by selectively exciting a single resonant QD and off-resonant QDs, we identify distinct single-QD signatures in the lasing characteristics and distinguish between gain contributions of a single resonant emitter and a countable number of off-resonant background emitters to the optical output of the microlaser. Our work addresses the important question whether single-QD lasing is feasible in experimentally accessible systems and shows that, for the investigated microlaser, the single-QD gain needs to be supported by the background gain contribution of off-resonant QDs to reach the transition to lasing. Interestingly, while a single QD cannot drive the investigated micropillar into lasing, its relative contribution to the emission can be as high as 70% and it dominates the statistics of emitted photons in the intermediate excitation regime below threshold.

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Section: Introductionmentioning

confidence: 99%

Controlling the gain contribution of background emitters in few-quantum-dot microlasers

et al. 2018

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“…Solutions to the current problems of site‐controlled QD growth require both long‐range vertical ordering effects as well as an easily scalable surface preparation technology. Aiming both at large scale processes and defect‐free growth surfaces, the buried stressor approach was recently developed by us 23. Long range, site‐controlled QD growth is achieved through laterally modulated strain fields at the surface of a GaAs(001) substrate.…”

Section: Introductionmentioning

confidence: 99%

Site‐controlled quantum dot growth on buried oxide stressor layers

Strittmatter

Holzbecher

Schliwa

et al. 2012

Physica Status Solidi (a)

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Site-controlled growth of quantum dots (QDs) for single photon emitters (SPEs) is achieved applying a buried stressor approach. Theoretical and experimental analysis shows that site-controlled QD growth on buried oxide stressor-layers benefits enormously from a defect-free growth interface. Laterally modulated strain fields at GaAs(001) growth surfaces are used to tailor surface morphologies at the centre of prescribed mesa structures for subsequent QD growth. Suitable morphologies for site-controlled QD growth such as nano-hillocks and nanoholes are identified. Site-controlled QD growth appears above the boundaries between the oxidised layer and the non-oxidised semiconductor layer. Through fine tuning of wetting layer thickness and growth interruption high selectivity for QD nucleation is achieved. Thus, growth of single QDs at the centre of a current-injection limiting aperture is demonstrated. Moreover, the QD growth on a defect-free surface yields high quality optical properties in terms of narrow emission linewidth and temporal stability with no discernible difference to QDs grown on planar substrates. The technological simplicity of the buried stressor approach and the inherent integration of a current aperture for efficient carrier injection into site-selected QDs enable mass production of SPEs on large substrate sizes.

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“…It consists (along the growth direction from right to left) of a highly doped, metallic GaAs back contact, a GaAs-(AlGa)As tunnelling barrier, the quantum dot layer, a GaAs spacer layer, and an (AlGa)As blocking layer. In a pre-growth etching process the sample was patterned into cylindrical mesas of ∼ 18.6 µm diameter [27,28]. Lithographically defined contacts on top of a single mesa allow for controlling the electric field at the quantum dots by applying a gate voltage.…”

Section: Sample Growth and Processingmentioning

confidence: 99%

Charge-driven feedback loop in the resonance fluorescence of a single quantum dot

et al. 2017

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Semiconductor quantum dots can emit antibunched, single photons on demand with narrow linewidths [1][2][3]. However, the observed linewidths are broader than lifetime measurements predict, due to spin and charge noise in the environment [4,5]. This noise randomly shifts the transition energy and destroys coherence [6,7] and indistinguishability [8,9] of the emitted photons. Fortunately, the fluctuations can be reduced by a stabilization using a suitable feedback loop [10][11][12].In this work we demonstrate a fast feedback loop that manifests itself in a strong hysteresis and bistability of the exciton resonance fluorescence signal. Field ionization of photogenerated quantum dot excitons leads to the formation of a charged interface layer that drags the emission line along over a frequency range of more than 30 GHz. This internal charge-driven feedback loop could be used to reduce the spectral diffusion and stabilize the emission frequency within milliseconds, presently only limited by the sample structure, but already faster than nuclear spin feedback. 1 arXiv:1606.03215v1 [cond-mat.mes-hall]

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Lateral positioning of InGaAs quantum dots using a buried stressor

Cited by 32 publications

References 16 publications

Controlling the gain contribution of background emitters in few-quantum-dot microlasers

Controlling the gain contribution of background emitters in few-quantum-dot microlasers

Site‐controlled quantum dot growth on buried oxide stressor layers

Charge-driven feedback loop in the resonance fluorescence of a single quantum dot

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