Lateral nonuniformity of effective oxide charges in MOS capacitors with Al/sub 2/O/sub 3/ gate dielectrics

Huang, Szu-Wei; Hwu, Jenn–Gwo

doi:10.1109/ted.2006.875816

Cited by 23 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Aggressive scaling of the SiO 2 gate dielectric thickness in complementary metaloxide-semiconductor (CMOS) integrated circuit technology led to excessive gate leakage current (2)(3)(4), standby power consumption (2)(3)(4), and reliability problems (5). To solve these issues, high dielectric constant (high-k) material became alternative gate dielectrics in order to reduce gate leakage current (6)(7)(8). Among all high-k gate materials, HfO 2 is the most promising candidate due to large band gap, high dielectric constant, and large band offset with Si conduction band (9)(10).…”

Section: Introductionmentioning

confidence: 99%

Improvement on Interface Quality and Reliability Properties of HfAlO_x MIS Capacitor with Dual Plasma Treatment

Chang

et al. 2012

ECS Trans.

View full text Add to dashboard Cite

HfO 2 is considered a promising gate dielectric material for sub-45 nm CMOS technology. It has been reported that incorporate Al into HfO 2 forming Hf aluminates in order to increase the crystallization temperature. However, the growth of the low-k interfacial layer at high-k/Si interface during high-k dielectric deposition would result in reliability degradation. Recently, incorporating nitrogen into HfAlO x gate dielectrics has beneficial effect on reliability performance. In addition, fluorine incorporation into high-k dielectrics also could have several improvements. In this study, dual plasma (CF 4 pre-treatment and N 2 post-treatment) was performed on HfAlO x MIS capacitor in order to improve interface quality and the reliability properties. According to our experimental results, dual plasma treatment could improve interface quality and enhance reliability properties of HfAlO x thin films.

show abstract

Section: Introductionmentioning

confidence: 99%

Improvement on Interface Quality and Reliability Properties of HfAlO_x MIS Capacitor with Dual Plasma Treatment

Chang

et al. 2012

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…In recent years, high-k dielectric has obtained much attention as a potential candidate to replace SiO 2 gate insulator for very large scale integration (VLSI) applications. [2][3][4][5][6][7] High gate capacitance or low equivalent oxide thickness thus can be achieved simultaneously with low gate current. Concurrently, one of the most promising deposition techniques for high-k materials is atomic layer deposition (ALD), as it is manufacturabe and provides excellent conformality and uniformity.…”

Section: Introductionmentioning

confidence: 99%

Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure

Tsai

Lee

Peng

et al. 2008

jjap

View full text Add to dashboard Cite

In this study, the characteristics of Ta/chemical SiO 2 /Si devices with their chemical oxides formed by various chemicals, including HNO 3 , SC1, and H 2 SO 4 +H 2 O 2 solutions, were first investigated. We found the HNO 3 split depicts the lowest leakage current and the best hysteresis behavior. Next, chemical oxide formed by HNO 3 was applied to form the interfacial SiO 2 layer for metal-oxide-semiconductor (MOS) devices with Ta/HfAlO/chemical SiO 2 /Si structrue. The effects of a hightemperature spike anneal were then studied. We found that the spike-anneal process can effectively reduce the thickness of the chemical oxide from 10 to 7 Å , thus is beneficial in preserving the low effective oxide thickness (EOT) of the structure. Furthermore, both the gate leakage current and stress-induced leakage current (SILC) were also effectively suppressed by the high-temperature spike-anneal.

show abstract

“…To decrease the gate leakage current, high-κdielectric materials like hafnium oxide and aluminum oxide are applied in gate dielectric. [2][3][4][5] Nevertheless, although tunneling current looks like a trouble in integrated circuits, it could be applied to photo sensors. 6 It is found that in ultra-thin oxide silicon-based metal-insulator-semiconductor (MIS) photodiodes with nontransparent metal gate, the electron-hole pairs are generated in the depletion region at the edge below the metal gate, resulting in light current tunneling through the oxide and further cause the difference between light and dark currents.…”

mentioning

confidence: 99%

Photo Response Enhancement in MIS(p) Tunnel Diode via Coupling Effect by Controlling Neighboring Device Inversion Level

Hou¹,

Hwu²

2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The current coupling effect in concentric circle MIS(p) structure was investigated. It is found that the saturation current of the central device could be affected by the distance between two electrodes (S) and the voltage bias (VG) of the nearby device. While the electrode separation and VG change, minority carrier distribution at the fringe of the MIS tunnel diode also changes causing the variation in the saturation current of the central device. In addition, it is also found that by well-controlling VG, the light to dark current ratio Ilight/Idark of the central device could be effectively enhanced. In this study, two intensities of illumination on MIS(p) tunnel diodes were displayed. It is found that the maxima of current ratio Ilight/Idark took place at different values of VG for different intensities of illumination. Coupling effect plays an important role in this phenomenon.

show abstract

Lateral nonuniformity of effective oxide charges in MOS capacitors with Al/sub 2/O/sub 3/ gate dielectrics

Cited by 23 publications

References 12 publications

Improvement on Interface Quality and Reliability Properties of HfAlO_x MIS Capacitor with Dual Plasma Treatment

Improvement on Interface Quality and Reliability Properties of HfAlO_x MIS Capacitor with Dual Plasma Treatment

Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure

Photo Response Enhancement in MIS(p) Tunnel Diode via Coupling Effect by Controlling Neighboring Device Inversion Level

Contact Info

Product

Resources

About

Lateral nonuniformity of effective oxide charges in MOS capacitors with Al/sub 2/O/sub 3/ gate dielectrics

Cited by 23 publications

References 12 publications

Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment

Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment

Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure

Photo Response Enhancement in MIS(p) Tunnel Diode via Coupling Effect by Controlling Neighboring Device Inversion Level

Contact Info

Product

Resources

About

Improvement on Interface Quality and Reliability Properties of HfAlO_x MIS Capacitor with Dual Plasma Treatment

Improvement on Interface Quality and Reliability Properties of HfAlO_x MIS Capacitor with Dual Plasma Treatment