Lateral Heterostructures Formed by Thermally Converting n-Type SnSe<sub>2</sub> to p-Type SnSe

Tian, Zhen; Zhao, Mingxing; Xue, Xiong-Xiong; Xia, Wei; Guo, Chenglei; Guo, Yanfeng; Feng, Yexin; Xue, Jiamin

doi:10.1021/acsami.8b01235

Cited by 42 publications

(38 citation statements)

References 58 publications

(119 reference statements)

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“…Through CVD, thermal [ 154 ] and plasma treatments [ 155 ] have been used to realize LHSs. The methods need multi-step fabrication processes and can apply only on specific materials.…”

Section: The Experimental Synthesis Of Lhssmentioning

confidence: 99%

Recent Advances in 2D Lateral Heterostructures

et al. 2019

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HIGHLIGHTS• The tunable mechanisms of lateral heterostructures on both homogeneous junctions and heterogeneous junctions are summarized.• Electronic and photoelectronic devices with lateral heterostructures have been discussed.• Different types of contacts of 2D lateral heterostructures are classified. • Recent developments in synthesis and nanofabrication technologies of 2D lateral heterostructures are reviewed. ABSTRACT Recent developments in synthesis and nanofabrication technologies offer the tantalizing prospect of realizing various applications from twodimensional (2D) materials. A revolutionary development is to flexibly construct many different kinds of heterostructures with a diversity of 2D materials. These 2D heterostructures play an important role in semiconductor and condensed matter physics studies and are promising candidates for new device designs in the fields of integrated circuits and quantum sciences. Theoretical and experimental studies have focused on both vertical and lateral 2D heterostructures; the lateral heterostructures are considered to be easier for planner integration and exhibit unique electronic and photoelectronic properties. In this review, we give a summary of the properties of lateral heterostructures with homogeneous junction and heterogeneous junction, where the homogeneous junctions have the same host materials and the heterogeneous junctions are combined with different materials. Afterward, we discuss the applications and experimental synthesis of lateral 2D heterostructures. Moreover, a perspective on lateral 2D heterostructures is given at the end.

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“…Through CVD, thermal [ 154 ] and plasma treatments [ 155 ] have been used to realize LHSs. The methods need multi-step fabrication processes and can apply only on specific materials.…”

Section: The Experimental Synthesis Of Lhssmentioning

confidence: 99%

Recent Advances in 2D Lateral Heterostructures

et al. 2019

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“…1,12,13 Since no intentional dopants are introduced in crystal growth, this doping has its intrinsic origin, most likely from Ge deficiency. Calculations of similar materials, such as SnSe, 14 have indicated that Sn vacancy has a moderate formation energy (less than 1 eV, to be compared with growth temperature of 800 °C). This intrinsic p-type doping is the common feature of group IV monochalcogenides.…”

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confidence: 99%

Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe

Xia

Guo

et al. 2019

Applied Physics Letters

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For electronic and photoelectronic devices based on GeSe, an emergent two dimensional monochalcogenide with many exciting properties predicted, good electrical contacts are of great importance for achieving high device performances and exploring the intrinsic physics of GeSe. In this article, we use temperature-dependent transport measurements and thermionic emission theory to systematic investigate the contact-barrier heights between GeSe and six common electrode metals, Al, Ag, Ti, Au, Pt and Pd. These metals cover a wide range of work functions (from ~ 3.6 eV to ~ 5.7 eV). Our study indicates that Au forms the best contact to the valence band of GeSe, even though Au does not possess the highest work function among the metals studied. This behavior clearly deviates from the expectation of Schottky-Mott theory and indicates the importance of the details at the interfaces between metals and GeSe.GeSe, a member of group IV monochalcogenides, is a layered semiconductor attracting increasing attentions. [1][2][3]4 Its direct and indirect bandgaps covers the entire solar spectrum, making it a potential candidate for photodetecting and photovoltaic applications with good energy conversion efficiency. 2,4,5

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“…Figure S5d shows that the pure SnSe exhibited the p‐type characteristic due to extra holes created by Sn vacancies, consistent with the previous reports . Differently, the pure SnSe 2 exhibited the n‐type characteristic, possibly due to electron doping from Se vacancies (Figure S5e) . Note that the SnSe(50 %)/SnSe 2 (50 %) hybrid layer also showed an n‐type behavior (Figure S5f), suggesting electrons were the major charge carriers.…”

Section: Resultsmentioning

confidence: 95%

Solution‐Processed p‐SnSe/n‐SnSe₂ Hetero‐Structure Layers for Ultrasensitive NO₂ Detection

Wang

Liu

Dai

et al. 2020

Chemistry A European J

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The formation of semiconductor heterostructures is an effective approach to achieve high performance in electrical gas sensing. However, such heterostructures are usually prepared via multi‐step procedures. In this contribution, by taking advantage of the crystal phase‐dependent electronic property of SnSex based materials, we report a one‐step colloid method for the preparation of SnSe(x%)/SnSe2(100−x%) p–n heterostructures, with x ≈30, 50, and 70. The obtained materials with solution processability were successfully fabricated into NO2 sensors. Among them, the SnSe(50 %)/SnSe2(50 %) based sensor with an active layer thickness of 2 μm exhibited the highest sensitivity to NO2 (30 % at 0.1 ppm) with a limit of detection (LOD) down to 69 ppb at room temperature (25 °C). This was mainly attributed to the formation of p–n junctions that allowed for gas‐induced modification of the junction barriers. Under 405 nm laser illumination, the sensor performance was further enhanced, exhibiting a 3.5 times increased response toward 0.1 ppm NO2, along with a recovery time of 4.6 min.

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Lateral Heterostructures Formed by Thermally Converting n-Type SnSe₂ to p-Type SnSe

Cited by 42 publications

References 58 publications

Recent Advances in 2D Lateral Heterostructures

Recent Advances in 2D Lateral Heterostructures

Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe

Solution‐Processed p‐SnSe/n‐SnSe₂ Hetero‐Structure Layers for Ultrasensitive NO₂ Detection

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Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe

Cited by 42 publications

References 58 publications

Recent Advances in 2D Lateral Heterostructures

Recent Advances in 2D Lateral Heterostructures

Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe

Solution‐Processed p‐SnSe/n‐SnSe2 Hetero‐Structure Layers for Ultrasensitive NO2 Detection

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Product

Resources

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Lateral Heterostructures Formed by Thermally Converting n-Type SnSe₂ to p-Type SnSe

Solution‐Processed p‐SnSe/n‐SnSe₂ Hetero‐Structure Layers for Ultrasensitive NO₂ Detection