Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates

Saddow, Stephen E.; Carter, G.E.; Geil, Bruce; Zheleva, T.; Melnychuck, Galyna; Okhuysen, M.E.; Mazzola, Michael S.; Vispute, R. D.; Derenge, Michael A.; Ervin, Matthew H.; Jones, Kenneth A.

doi:10.4028/www.scientific.net/msf.338-342.245

Cited by 15 publications

(14 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was developed to reduce the dislocation density in heteroepitaxial group III nitrides, which originate from the heterointerface. Several groups [179][180][181][182][183][184][185] have conducted research regarding selective area growth and lateral epitaxial overgrowth techniques for GaN and SiC [186] deposition. The crystal quality of the overgrown layers of these materials was sufficient to be used for device applications.…”

Section: 23mentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

348

217

View full text Add to dashboard Cite

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

show abstract

Section: 23mentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

348

217

View full text Add to dashboard Cite

show abstract

“…[3][4][5] SiC is prepared by the thermal decomposition of various source gases including methyltrichlorosilane (CH 3 SiCl 3 ; MTS) and methane, acetylene or propane at temperatures above 1773 K. This high deposition temperature results in the introduction of structural defects in the layers and difficulties with using the system in the field. [6][7][8][9][10][11][12][13][14][15] Besides the above constraint, MTS decomposes under typical SiC CVD conditions producing corrosive HCl, SiHCl 3 , SiCl 3 , SiCl 4 , and CH 4 as well as other silanes and hydrocarbons. [16][17][18][19][20][21][22] The MTS-CVD gas phase products of chlorine can attack the kernel and result in uranium dispersion into the surrounding buffer.…”

Section: Introductionmentioning

confidence: 99%

Nanocrystalline silicon carbide thin films by fluidised/packed bed chemical vapor deposition using a halogen-free single source

Selvakumar

Sathiyamoorthy

2012

J. Mater. Chem.

View full text Add to dashboard Cite

Thermal stability, vapor pressure, and binary gaseous diffusion coefficients of organosilanes were studied at temperatures in the range of 309-507 K in ambient pressure. The temperature dependence equilibrium vapor pressure (p e ) T data yielded a straight line, when ln p e was plotted against the reciprocal temperature, leading to a standard enthalpy of sublimation (D s H ) values of 43.3 AE 0.6, 68.2 AE 0.8 and 72.4 AE 0.6 kJ mol À1 for 1,4-bis(trimethylsilyl)butadiyne (TMSBu), 1,4bis(trimethylsilyl)benzene (TMSB), and 1,4-bis[(trimethylsilyl)-ethynyl]benzene (TMSEB) and vaporisation (D v H ) values of 33.9 AE 0.2 kJ mol À1 , 44.3 AE 0.6 kJ mol À1 , 64.5 AE 0.5 kJ mol À1 , 75.8 AE 0.6 kJ mol À1 , and 94.3 AE 0.4 kJ mol À1 for triphenylsilane (TPS), 1,4-bis[(trimethylsilyl)-ethynyl] benzene (TMSEB), triphenylvinylsilane (TPVS), 1,1,2,2-tetraphenyldisilane (TPDS), and 1,2dimethyl-1,1,2,2-tetraphenyldisilane (DMTPDS), respectively. In order to find the enthalpy of formation (D f H ) at the condensed and gaseous state of each molecule at standard temperature, the semi-empirical quantum chemical analysis was carried out. The screened/selected ideal candidate was used to deposit silicon carbide thin films on the carbon black or silicon or zirconia particles in the fluidised/packed bed reactor. The deposits were characterized using X-ray diffraction and scanning electron microscopy methods.

show abstract

“…A common way to reduce the strain is to pattern the silicon substrate in order to grow SiC crystal with a finite size. The first material used and the most common one to manufacture the mask is silicon oxide [56,57], but other materials like silicon nitride or aluminum nitride also proved to be effective [58].…”

Section: Growth Of 3c-sic Filmsmentioning

confidence: 99%