Lateral Conduction Switching in Sputtered Ni‐rich NiO Thin Films for Write‐Once‐Read‐Many‐Times Memory Applications

Abstract

Magnetron sputtering has been used to deposit Ni-rich nickel oxide thin films. Based on the switching of lateral current conduction in the nickel oxide thin film between two in-plane electrodes, a planar write-once-read-many-times memory device has been demonstrated. The switching from a low-conductance state (i.e., the OFF state) to a high-conductance state (i.e., the ON state) is induced by a writing voltage, and it is irreversible due to the formation of tilted conductive filaments that are hard to be dissolved by the Joule heating effect. For 80 devices under test, the writing voltage is in a narrow range of 2.0À3.5 V and the ON/OFF resistance ratio is larger than 10 5 at the reading voltage of 0.3 V. An excellent reading endurance (10 6 readings) for both ON and OFF states is demonstrated. The device is promising in low-power applications as it can operate at ultra-low voltages (e.g., the reading voltage can be below 100 mV).

Amorphous indium gallium zinc oxide thin film transistor and memory device for future device applications

“…The size of mother-glass has been enlarged from the first generation of 320 mm × 400 mm to the current 10 th generation of 3130 mm x 2880 mm as the development trend of the displays requires a wider range of visual interfaces and a higher resolution. 6,7 Figure 1.1 Mother-glass substrate size vs. application 7 Nowadays, amorphous-Si (a-Si) TFT is a matured technology in the LCD industry.…”

“…The reduction of the traps near or at the IGZO/HfO 2 interface caused by the O 2 plasma immersion could be a factor for the decrease of the S.S also.In conclusion, O 2 plasma immersion greatly affects the electrical properties of the IGZO thin films and the electrical characteristics of the TFTs. As compared to the situation without O 2 plasma immersion, the Hall mobility increases by 17 times while the electron concentration decreases by over 600 times after the immersion of 75 s; and the immersion of 135 s causes the reduction in the transistor's off current by a factor of 3.6108 and enhancement in the on/off ratio by a factor of 1.4107 . O 2 plasma immersion also significantly enhances the field-effect mobility and reduces the sub-threshold swing, while it does not produce a significant impact on the threshold voltage.…”