Amorphous indium gallium zinc oxide thin film transistor and memory device for future device applications

Abstract

It's very fortunate for me to have Prof. Chen Tu pei from Nanyang Technological University (NTU) as my PhD supervisor. I sincerely appreciate his patient guidance, continuously technical support and suggestions throughout my research work. His analytical skills and device physics knowledge have provided me an insightful understanding towards the completion of this PhD work. Whenever I encountered any problem in research, his invaluable advices and constantly encouragement would always get through it, it's a really fruitful journey in my PhD life under his guidance. I would like to sincerely thank to SP program from GLOBALFOUNDRIES Singapore PTE LTD for the financial support. Special thanks to Dr. Lap Chan and Mr. Leong Kam Chew from GLOBALFOUNDRIES Singapore PTE LTD for their advices and technical training lessons conducted in the weekly meeting. My appreciation to my mentor (Dr. Yang Jian Bo) in GLOBALFOUNDRIES Singapore PTE LTD for his help of the collaborating with TD department engineers and arranging the Tool time. Many thanks to all technical staffs in Nanyang NanoFabrication Center (N2FC) Cleanroom 1 and Cleanroom 2 providing the various equipment for sample preparation and device fabrication, as well as NanoPhotonics lab for device characterization in School of Electronics Electrical Engineering (EEE). Their technical support and friendly help has allowed me run the project smoothly.