Lateral-cavity spectral hole burning in quantum-dot lasers

Ouyang, D.; Heitz, R.; Ledentsov, N. N.; Bognár, S.; Sellin, R.L.; Ribbat, C.; Bimberg, D.

doi:10.1063/1.1503852

Cited by 24 publications

(18 citation statements)

References 18 publications

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“…The presence of an additional resonance constraint that imposes this broader spectral selectivity is more likely. Similar spectral observations have been reported for lasers based on a dye solution in a cuvette and a quantum-dot waveguide, and in both cases the lateral dimensions of the waveguide were considered responsible for this wavelength selectivity [16,17]. In other work, longitudinal mode grouping has been attributed to interference effects with substrate modes leading to a wavelength dependent depletion of the net-gain, but also linked to the linewidth of the homogenously broadened laser transition [18,19].…”

Section: Spectral Selectivitysupporting

confidence: 73%

Fluidic fibre dye lasers

Vasdekis¹,

Town²,

Turnbull³

et al. 2007

Opt. Express

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We report the demonstration of compact fluidic fibre lasers based on capillary tubes and photonic crystal fibres, featuring single channel and multiple laterally integrated fluidic lasers respectively. Their preparation was based on capillary action and lasing occurred without the need for external mirrors or lithographically defined microstructures. The fibre lasers were found to be tunable by varying the chromophore density in the liquid core and a functional wavelength selectivity mechanism inherent in both types of lasers provided a long free spectral range that does not correspond to the length of the fibres. The enhanced mode spacing is attributed to a Vernier resonant effect.

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Section: Spectral Selectivitysupporting

confidence: 73%

Fluidic fibre dye lasers

Vasdekis¹,

Town²,

Turnbull³

et al. 2007

Opt. Express

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“…This is possible in a carrier deficient system (i.e., the QCW mode) where the possibility of thermal carrier spillover is high leading to non-uniform thermal re-distribution of carriers among Qdash stacks that would affect the active region gain, and hence the lasing spectra. Note that the spectral position of the low intensity gap depends on the drive current and therefore we rule out the possibility of any lateral cavity resonances [17] or leaky substrate modes [18] in our device that might cause such anomalous observation. However, we cannot exclude the possibility of different non-linear phenomena occurring in the active region that affects the lasing spectra, particularly, the spectral and spatial hole burning effects which intensifies with continuous surge of carriers and/or temperature rise.…”

Section: Device Characterizationmentioning

confidence: 95%

Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser

Khan

Lee

et al. 2013

IEEE Photonics J.

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We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pe ´rot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.

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“…Detailed studies of the dependence of the characteristic separation between the valleys in the lasing spectrum on the ridge stripe width of QD lasers was done in [ 39 ]. It was clearly shown that the mode group spacing strongly increases with decrease in the ridge stripe width, evidencing the impact of the transverse cavity effect.…”

Section: Longitudinal Mode Grouping In Qd Lasersmentioning

confidence: 98%

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

et al. 2004

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The molecular beam epitaxy of self-assembled quantum dots (QDs) has reached a level such that the principal advantages of QD lasers can now be fully realized. We overview the most important recent results achieved to date including excellent device performance of 1.3 µm broad area and ridge waveguide lasers (J th <150A/cm 2 , I th =1.4 mA, differential efficiency above 70%, CW 300 mW single lateral mode operation), suppression of non-linearity of QD lasers, which results to improved beam quality, reduced wavelength chirp and sensitivity to optical feedback. Effect of suppression of side wall recombination in QD lasers is also described. These effects give a possibility to further improve and simplify processing and fabrication of laser modules targeting their cost reduction. Recent realization of 2 mW single mode CW operation of QD VCSEL with all-semiconductor DBR is also presented. Long-wavelength QD lasers are promising candidate for mode-locking lasers for optical computer application. Very recently 1.7-ps-wide pulses at repetition rate of 20 GHz were obtained on mode-locked QD lasers with clear indication of possible shortening of pulse width upon processing optimization. First step of unification of laser technology for telecom range with QD-lasers grown on GaAs has been done. Lasing at 1.5 µm is achieved with threshold current density of 0.8 kA/cm 2 and pulsed output power 7W.

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Lateral-cavity spectral hole burning in quantum-dot lasers

Cited by 24 publications

References 18 publications

Fluidic fibre dye lasers

Fluidic fibre dye lasers

Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

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