2000
DOI: 10.1002/1616-8984(200011)8:1<95::aid-seup95>3.0.co;2-a
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Lateral and Vertical Hall Microsystems

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Cited by 3 publications
(2 citation statements)
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References 34 publications
(63 reference statements)
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“…Ways to reduce stress acting on the sensor structure are, e.g., the use of materials with matching coef®cient of thermal expansion or the use of soft, elastic die attach materials. In addition, electronic compensation techniques, such as the spinning current technique in Hall sensors [7], are employed for offset reduction.…”
Section: Challenges In Microsensor Packagingmentioning
confidence: 48%
“…Ways to reduce stress acting on the sensor structure are, e.g., the use of materials with matching coef®cient of thermal expansion or the use of soft, elastic die attach materials. In addition, electronic compensation techniques, such as the spinning current technique in Hall sensors [7], are employed for offset reduction.…”
Section: Challenges In Microsensor Packagingmentioning
confidence: 48%
“…For the topology optimization we started with a uniform conductivity density of 0.5, assuming a magnetic induction of 0.3 T which is a typical value for permanent magnets [29]. The Hall mobility was 0.125 m P /Vs for doped silicon and phonon hall scattering [25].…”
Section: Optimum Layoutmentioning
confidence: 99%