Lateral 2D TMDC Memristors – Experiment and Modeling

Spetzler, Benjamin; Geng, Zhansong; Ziegler, Martin; Schwierz, Frank

doi:10.1109/icsict55466.2022.9963350

Cited by 1 publication

(4 citation statements)

References 12 publications

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“…This result sheds new light on the frequently brought‐up hypothesis that SBL could be a major hysteresis mechanism in such devices. [ 23,48,49 ]…”

Section: Discussionmentioning

confidence: 99%

“…This result sheds new light on thefrequentlybrought-up hypothesis that SBL could be a major hysteresis mechanism in such devices. [23,48,49] Table 2. Summary of MoS 2 material parameters collected from the literature for a layer thickness of ≈15 nm and comparison with the values used in the simulations.…”

Section: Discussionmentioning

confidence: 99%

“…The few reported models of lateral devices are based on analytical approximations of the I-V curve with many fitting parameters, [16] compact-model formulations. [48,49] or incompletely coupled approaches in adiabatic approximation, omitting dynamic effects. [50] While such models can be helpful in circuit simulations and device design, they do not capture the complex dynamics of the switching process crucial for device functionality.…”

Section: Introductionmentioning

confidence: 99%

“…Further, image-charge-induced Schottky barrier lowering (SBL) is frequently assumed to be highly relevant for interfacetype switching. [23,48,49] This effect describes the change of the Schottky barriers caused by an applied voltage and a dynamic redistribution of charge carriers in the semiconductor. [51,52] Hence, SBL could lead to hysteresis by altering the interfacelimited conduction.…”

Section: Introductionmentioning

confidence: 99%

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The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices

Spetzler,

Abdel,

Schwierz

et al. 2023

Adv Elect Materials

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Two‐dimensional layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems. Despite extensive experimental work, the underlying switching mechanisms are still not understood, impeding progress in material and device functionality. This study reveals the dominant role of defect dynamics in the switching process of 2D TMDC materials. The switching process is governed by the formation and annihilation dynamics of a local vacancy depletion zone. It explains the distinct features of the device characteristics observed experimentally, including fundamentally different device behavior previously thought to originate from multiple mechanisms. Key influence factors are identified and discussed with a fully coupled and dynamic charge transport model for electrons, holes, and ionic point defects, including image‐charge‐induced Schottky barrier lowering (SBL). Thermal effects and local Joule heating are considered by coupling the transient heat transfer equation to the electronic properties. The model is validated with hysteresis and pulse measurements for various lateral 2D MoS2‐based devices, strongly corroborating the relevance of vacancy dynamics in TMDC devices and offering a new perspective on the switching mechanisms. The insights gained from this study can be used to extend the functional behavior of 2D TMDC memristive devices in future neuromorphic computing applications.

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“…This result sheds new light on the frequently brought‐up hypothesis that SBL could be a major hysteresis mechanism in such devices. [ 23,48,49 ]…”

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%