Latent track formation in germanium irradiated with 20, 30 and 40 MeV fullerenes in the electronic regime

Colder, A.; Marty, Olivier; Canut, B.; Levalois, M.; Marie, Philippe; Portier, X.; Ramos, S.M.M.; Toulemonde, M.

doi:10.1016/s0168-583x(01)00314-7

Cited by 53 publications

(28 citation statements)

References 29 publications

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“…In the thicker areas, the mean distance between the track defects allows within the observed thickness, an overlap of crystalline and amorphous zones. Furthermore, in contrast to what was seen in Si or Ge [27,28], no track recrystallization is induced by the TEM electron beam, even after 15-min exposure with a condensed beam.…”

Section: Gancontrasting

confidence: 57%

“…Tracks have been observed by TEM in PV configuration after fullerene irradiations (C 60 40 MeV, C 60 30 MeV, and C 60 20 MeV) [27][28][29][30] in Si, Ge, InP, and GaAs. The results are presented in Fig.…”

Section: Application Of the I-ts Modelmentioning

confidence: 99%

“…Amorphous tracks were evidenced in Si [27], Ge [28], InP [29], and GaAs [30] irradiated with tens of MeV C 60 clusters. For the sake of simplicity, we will refer to SHI or cluster irradiations when dealing, respectively, with monatomic or polyatomic projectiles.…”

Section: Introductionmentioning

confidence: 99%

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Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

et al. 2015

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International audienceAlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N-2 and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors

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Section: Gancontrasting

confidence: 57%

Section: Application Of the I-ts Modelmentioning

confidence: 99%

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Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

et al. 2015

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“…Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7].…”

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confidence: 99%

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

et al. 2013

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Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification. DOI: 10.1103/PhysRevLett.110.245502 PACS numbers: 61.80.Jh, 61.43.Dq, 61.43.Bn, 61.05.cf Swift heavy-ion irradiation (SHII) has many applications, spanning geochronological dating [1] to nanostructure fabrication [2]. Though this approach has found industrial application [3], the fundamental nature of ionsolid interactions at very high ion energies remains poorly understood. Such interactions are dominated by inelastic processes (electronic stopping) resulting in the excitation and ionization of substrate atoms while, in contrast, the elastic processes (nuclear stopping) that lead to ballistic atomic displacements at much lower energies are negligible in the SHII regime. The efficiency with which energy deposited in the electronic subsystem is subsequently transferred to the lattice is governed by the electronphonon coupling parameter g where typically g amorphous > g crystalline due to a reduced electron mean free path in the former. When the lattice temperature exceeds that required for melting, a narrow cylinder of molten material is formed along the ion path. The ensuing rapid resolidification of this transient liquid phase can yield remnant structural modifications within the substrate in the form of an ion track.Crystalline Ge (c-Ge) is relatively insensitive to SHII such that ion-track production necessitates very high electronic stopping S e values. Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7]. A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core. The sole report of ion tracks in a-Ge is that of Furuno et al. [9] who reported recrystallization of tracks in a 5-nm a-Ge layer following SHII in a grazing-incidence orientation, a geometry that can lead to significant reductions in threshold S e values for ion-track formation [10]. The proximity of the surface could also perturb resolidification and enable recrystallization given the molten i...

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“…Si (37*) (Kamarou et al, 2008) Co (37) (Dunlop & Lesueur, 1993) Ge (38) (Colder et al, 2001) GaAs (38*) (Colder et al, 2001) Fe (40) (Dunlop et al, 1994) Above 40 Ge (42) (Komarov, 2003) Si (46*) (Dunlop et al, 1998) (Itoh et al, 2009)]. Values for C 60 projectiles are marked *, and those where surface data are given are marked #.…”

Section: -40mentioning

confidence: 99%

Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review

Peña‐Rodríguez¹,

Olivares²,

Carrascosa³

et al. 2012

Ion Implantation

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Latent track formation in germanium irradiated with 20, 30 and 40 MeV fullerenes in the electronic regime

Cited by 53 publications

References 29 publications

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review

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