Lasing characteristics of ZnxMg1−xO and ZnO:Al epilayers

Abstract

Optical characteristics of ZnxMg1−xO, ZnO:Al, and ZnO epilayers are investigated. At pulse laser pumping, stimulated emissions are observed in these epilayers. Among them, spectral blueshifts are dependent on the Mg substitution concentration, and the highest lasing photon energy of 3.51eV ever reported is observed in ZnO series materials. Furthermore, experimental results also show that by high concentration Mg substitution, a redshift of the electron-hole plasma stimulated emission is reduced and its efficiency does not decrease with the Mg substitution concentration. These results imply that the lasing frequency of ZnO series materials can be modified by substitution.

Disorder‐induced Raman scattering effects in one‐dimensional ZnO nanostructures by incorporation and anisotropic distribution of Dy and Li codopants

“…Very recently, wide‐bandgap nanostructured ZnO with high exciton binding energy (∼60 meV) has attracted considerable attention as a promising candidate for solar cells, gas sensors, biosensors, nano‐lasers, and in electroluminescence and photoluminescence applications 1–5. Pure ZnO, however, cannot meet the increasing demand of the present applications.…”

Evolution of surface morphology of dry-etched ZnO with Cl2/Ar plasma

“…Although sputtering methods and various methods of optimizing film growth have been reported to improve ZnO film quality, the quality of sputtered films is still too poor than other methods, such as pulsed laser deposition 8 and molecular beam epitaxy. 9 However, ZnO films can be produced by sputtering in high yield at low cost for the use as TCO films and in ZnO-based devices. 17,18 The RIE chamber was precleaned by an O 2 discharge process for 30 min to prevent contamination.…”

“…[8][9][10][11] To fabricate such devices, ZnO films should be easily processed using standard device process. Currently, the inductively coupled plasma ͑ICP͒ etching system is used as a standard tool in the production and research of ZnO devices.…”

Exciton-exciton scattering in vapor phase ZnO nanoparticles

“…3(a) can be ascribed to the P 2 band due to X-X scattering. 24,26 By contrast, at t ¼ 3 ls and d ¼ 6 mm, the PL spectra in the inset of Fig. 3(a) are characterized by a single emission peak at 3.23 eV for all I exc due to excitonic recombination.…”

“…At higher I exc below Mott transition, a PL emission band appears only in high quality samples due to inelastic collision between excitons, which results in an exciton to be excited into a higher state (n¼2,3,4, …,1), and a photon emitted with energy given by 24,26 (1)…”