2009
DOI: 10.1116/1.3212914
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Evolution of surface morphology of dry-etched ZnO with Cl2/Ar plasma

Abstract: Articles you may be interested inZnO thin film deposition using colliding plasma plumes and single plasma plume: Structural and optical properties J. Appl. Phys. 114, 224903 (2013); 10.1063/1.4846115Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions

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(2 citation statements)
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“…is the effective surface area for ion [46] loss, h L and h R are the axial and radial edge to centre positive ion density ratios given in section 2. 4, n e is the electron density, n i is the positive ion density and E e = 2T e is the mean kinetic energy per electron lost. The mean kinetic energy per ion lost E i is modified by the electronegativity as discussed elsewhere [1].…”
Section: Power Balancementioning
confidence: 99%
See 1 more Smart Citation
“…is the effective surface area for ion [46] loss, h L and h R are the axial and radial edge to centre positive ion density ratios given in section 2. 4, n e is the electron density, n i is the positive ion density and E e = 2T e is the mean kinetic energy per electron lost. The mean kinetic energy per ion lost E i is modified by the electronegativity as discussed elsewhere [1].…”
Section: Power Balancementioning
confidence: 99%
“…Chlorine and its mixtures are widely used for thin film etching, in particular poly-silicon. The etching of various thin films has been demonstrated in Cl 2 /Ar chemistry, including SiO 2 and MgO [2], Ta and TaN [3], ZnO [4], ZrO 2 [5] and Bi 4−x La x Ti 3 O 12 [6]. Shin et al [3] suggest that Cl radical density plays an important role in determining the etch rate and that the radical density is considerably influenced by the Cl 2 /Ar mixing ratio.…”
Section: Introductionmentioning
confidence: 99%