Laser studies of the reactivity of SiH with the surface of a depositing film

Ho, Pauline; Breiland, William G.; Buss, Richard J.

doi:10.1063/1.456971

Cited by 95 publications

(78 citation statements)

References 28 publications

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“…16 Previous measurements of SiH in this system show a surface reactivity near unity. 12 To better characterize the surface interactions of this molecule, we have also measured the surface reactivity as a function of substrate temperature T s . Dependence of reactivity on substrate temperature was not previously studied for SiH radicals.…”

Section: Introductionmentioning

confidence: 99%

“…Dependence of reactivity on substrate temperature was not previously studied for SiH radicals. 12 The second system studied is the OH radical produced from a 100% H 2 O plasma impinging on a 300 K Si substrate. This system neither etches nor deposits a film on the substrate.…”

Section: Introductionmentioning

confidence: 99%

“…[12][13][14][15] This versatile instrument incorporates a differentially pumped vacuum system, spatially resolved laser induced fluorescence ͑LIF͒, molecular beams, and rf plasma technology. The IRIS method was first developed nearly a decade ago at Sandia National Laboratories ͑SNL͒.…”

Section: Introductionmentioning

confidence: 99%

“…The IRIS method was first developed nearly a decade ago at Sandia National Laboratories ͑SNL͒. 12 The prototype instrument was used to measure the surface reactivity of SiH on a 300 K substrate using a 100% SiH 4 plasma as the molecular beam source. A subsequent instrument at SNL, incorporating differential pumping, has been used to study SiO, 14 NH, 13 and OH radicals.…”

Section: Introductionmentioning

confidence: 99%

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A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

McCurdy

Bogart

Dalleska

et al. 1997

Review of Scientific Instruments

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Dissociative chemisorption of CH 4 on a cesiated Pt (111) A new instrument employing molecular beam techniques and laser induced fluorescence ͑LIF͒ for measuring the reactivity of gas phase radicals at the surface of a depositing film has been designed and characterized. The instrument uses an inductively coupled plasma source to create a molecular beam containing essentially all plasma species. A tunable excimer pumped dye laser is used to excite a single species in this complex molecular beam. LIF signals are imaged onto a gated, intensified charge coupled device ͑ICCD͒ to provide spatial resolution. ICCD images depict the fluorescence from molecules both in the molecular beam and scattering from the surface of a depositing film. Data collected with and without a substrate in the path of the molecular beam provide information about the surface reactivity of the species of interest. Here, we report the first measurements using the third generation imaging of radicals interacting with surfaces apparatus. We have measured the surface reactivity of SiH molecules formed in a 100% SiH 4 plasma during deposition of an amorphous hydrogenated silicon film. On a 300 K Si ͑100͒ substrate, the reactivity of SiH is near unity. The substrate temperature dependence ͑300-673 K͒ of the reactivity is also reported. In addition, reactivity measurements for OH molecules formed in a water plasma are presented. In contrast to the SiH molecule, the reactivity of OH radicals is 0.55Ϯ0.05 on the surface of a Si ͑100͒ substrate.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

McCurdy

Bogart

Dalleska

et al. 1997

Review of Scientific Instruments

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“…27 For SiH sϭ␤ϭϳ0.95 44,45 and for Si it is generally assumed that sϭ␤ϭϳ1 on the basis of its hydrogen deficiency. 1,46 We note that the uncertainty in the density but also the uncertainty in the other parameters in Eq.…”

Section: B Si and Sih Density And Their Contribution To A-si:h Film mentioning

confidence: 99%

Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H2-SiH4 plasma

Kessels

Hoefnagels

Boogaarts

et al. 2001

Journal of Applied Physics

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Cavity ring down absorption spectroscopy is applied for the detection of Si and SiH radicals in a remote Ar-H2-SiH4 plasma used for high rate deposition of device quality hydrogenated amorphous silicon (a-Si:H). The formation and loss mechanisms of SiH in the plasma are investigated and the relevant plasma chemistry is discussed using a simple one-dimensional model. From the rotational temperature of SiH typical gas temperatures of ∼1500 K are deduced for the plasma, whereas total ground state densities in the range of 1015–1016 m−3 for Si and 1016–1017 m−3 for SiH are observed. It is demonstrated that both Si and SiH have only a minor contribution to a-Si:H film growth of ∼0.2% and ∼2%, respectively. From the reaction mechanisms in combination with optical emission spectroscopy data, it is concluded that Si and SiH radicals initiate the formation of hydrogen deficient polysilane radicals. In this respect, Si and SiH can still have an important effect on the a-Si:H film quality under certain circumstances.

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Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

Perrin

Leroy

Bordage

1996

Contrib. Plasma Phys.

339

260

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This paper presents a critical review of the basic data concerning the physics and chemistry of low pressure SiH4 glow discharges used to deposit hydrogenated amorphous silicon films (a&: H). Starting with an updated table of thermochemical data, we analyze the gas-phase elementary processes consisting of i) electron-molecule collisions, ii) ion-molecule collisions, iii) neutral-neutral collisions, iv) other electron and ion collisions involving electron-ion and ion-ion recombination, electron attachment on radicals and detachment of anions, and v) cluster growth kinetics in dusty plasmas. Experimental data or theoretical estimates are given and discussed in terms of cross-sections, collision and reaction rate constants, and transport coefficients. We also analyze the surface processes and reaction probabilities of ions, radicals and molecules.

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Laser studies of the reactivity of SiH with the surface of a depositing film

Abstract: Articles you may be interested inStudy of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma J.

Cited by 95 publications

References 28 publications

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H2-SiH4 plasma

Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

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