Laser-stimulated compensation of bulk defects in p-CdZnTe

Defects instability under IR laser treatment in p-CdZnTe crystals

“…The dominant DA-luminescence is indication of poor crystal quality which is due to a high concentration of shallow acceptor impurities. This result meets the results of electrical properties of the same crystals [13]. The ratio I DA =I A 0 X of DA and A 0 X lines is one of the figures of merit the such crystals suitability for detectors of ionized radiation [14] and should be (1.…”

“…It should be noted that changes in LTPL spectra of CdZnTe crystals after IR LT are well correlated with changes of resistivity q and optical transmission s data [13]. The resistivity increase observed is 2-3 orders in magnitude at room-temperature and 4-8 orders in magnitude at T = 77 K. The analysis of transmission spectral dependencies s(k) of CdZnTe crystals subjected to IR LT have shown an increase of s to an ultimate level of s = 64% up to k = 23 lm.…”

Influence of laser treatment on thermodynamic and kinetic parameters of lithium intercalation process into nanosized SiO2

“…As is shown in [18,19], the laser treatment of the crystal within its transparency range (hv 6 E g ) leads to an interaction of this radiation with different kinds of defects which are localized in the matrix bulk. The characteristic feature of such interaction is that laser stimulated changes of impurity subsystem energetic topology depend not only on laser treatment parameters but on the crystal optical parameters and on the nature of defects, interacting with the radiation, as well.…”

Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation

“…Another way to improve the quality of CdZnTe crystals is high temperature annealing at high Cd and Te vapors pressure [4]. The possibility to improve crystal quality by CO 2 laser irradiation was shown, but this method leads to the damage of the crystal surface during laser processing [5,6]. Recently, we have developed a method to change the chemical composition and structural properties of the CdZnTe surface using Nd:YAG laser (λ=532 nm) [7][8][9][10][11].…”