Laser slice thinning of GaN-on-GaN high electron mobility transistors

Tanaka, Atsushi; Sugiura, Ryuji; Kawaguchi, Daisuke; Wani, Yotaro; Watanabe, Hirotaka; Sena, Hadi; Ando, Yoshinobu; Honda, Yoshio; Igasaki, Yasuhiro; Wakejima, Akio; Ando, Yasuhisa; Amano, Hiroshi

doi:10.1038/s41598-022-10610-4

Cited by 5 publications

(2 citation statements)

References 39 publications

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“…[2][3][4][5][6][7] Very recently, a laser slicing technology for the lossless separation of GaN substrates has been reported. [8] Using this technology, one can separate a GaN-on-GaN HEMT wafer into a very thin HEMT device (50 μm thickness) and a base GaN substrate. Such a very thin HEMT device has excellent heat dissipation [9] and is expected to further improve of HEMT characteristics.…”

Section: Introductionmentioning

confidence: 99%

Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices

Sasaoka

Ando

Takahashi

et al. 2023

Physica Status Solidi (a)

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The metal stop laser drilling of GaN‐on‐GaN devices is demonstrated using a UV sub‐nanosecond laser as a light source. By monitoring the Bremsstrahlung emission at the drilling point, metal stops with a precision higher than 1 μm are realized for vias with a depth of 100 μm. From in situ laser‐induced breakdown spectroscopy measurements, it is shown that endpoint detection is realized with high signal‐to‐noise ratio owing to the difference in the emission process between the strongly excited semiconductor and the metal. Herein, a through‐substrate electrode with a resistance of less than 5 mΩ on GaN‐on‐GaN high‐electron‐mobility transistor (HEMT) wafers is demonstrated. The fabrication of through‐substrate electrodes by this technique provides a simple process that does not require lithography or other complex processes. This process is expected to be useful in the fabrication of future GaN‐on‐GaN devices, including very thin GaN‐on‐GaN HEMTs.

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Section: Introductionmentioning

confidence: 99%

Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices

Sasaoka

Ando

Takahashi

et al. 2023

Physica Status Solidi (a)

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“…To address this issue, a recycling process for GaN substrates using a laser slicing technique has been developed. [35][36][37][38] Figure 1 shows an overview of the GaN substrate recycling process. The thicknesses described in the figure represent the design values of the experiment in this study.…”

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confidence: 99%

Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs

Ishida,

Ushijima,

Nakabayashi

et al. 2024

Appl. Phys. Express

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To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which represent the main components of vertical power devices, exhibited no degradation either before and after laser slicing or due to the overall GaN substrate recycling process. This result indicates that the proposed recycling process is an effective method for reducing the cost of GaN substrates and has the potential to encourage the popularization of GaN vertical power devices.

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