Laser short-pulse heating of silicon-aluminum thin films

Abstract

Energy transport in silicon-aluminum thin films is examined during the laser short-pulse irradiation subjected to the silicon film. The silicon film is considered to be at the top of the aluminum film. Thermal boundary resistance at the interface of the films is incorporated in the analysis. The absorption of laser radiation in the silicon and aluminum films is modeled using the transfer matrix method. Since the silicon film is dielectric, the phonon radiative transport basing the Boltzmann transport equation is incorporated to determine equivalent equilibrium temperature in the film while modified two-equation model is used to account for the non-equilibrium energy transport due to thermal separation of electron and phonon sub-systems in the aluminum film during the laser short-pulse heating process.

Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

“…The investigation of these relationships in dielectric thin films constitutes the foundation of the understanding of behavior and performance of multilayer systems. This theme has attracted the interest of the scientific community [7][8][9][10] and it is the one we are interested in.…”

Phonon transport and equivalent equilibrium temperature in thin silicon films

“…Energy transport across silicon-aluminum thin films due to laser irradiation was examined by Mansoor and Yilbas [9]. They presented the solution of a two-equation model in the aluminum film to predict electron and phonon temperatures while frequency-independent phonon transport equations were incorporated to predict equivalent equilibrium temperature in the silicon film.…”