Energy transport in silicon–aluminum composite thin film during laser short-pulse irradiation

Physica B: Condensed Matter

2015

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Laser short-pulse heating of an aluminum thin film: Energy transfer in electron and lattice sub-systems

Physica B: Condensed Matter

2015

“…Although thermal transport in metallic films has been studied in previous studies [19][20][21], the main focus was to use the twotemperature model to determine temperature variation in the electron and lattice subsystems and energy transport was limited by the approximation of the diffusion model. Therefore, in the present study, energy transport in the cross plane of a paired silicon and aluminum thin film is investigated.…”

Section: Introductionmentioning

confidence: 99%

Phonon transport in aluminum and silicon film pair: laser short-pulse irradiation at aluminum film surface

2014

Can. J. Phys.

Phonon transport in paired aluminum and silicon thin films is considered under laser short-pulse irradiation at the aluminum film surface. The Boltzmann equation is incorporated to formulate energy transport in the films. To include a volumetric source resembling laser irradiation in the aluminum film, the Boltzmann equation is modified. Thermal boundary resistance is located at the interface of the film pair. An equivalent equilibrium temperature is introduced to assess the thermal resistance of the film during the laser heating process. The phonon temperature obtained from solution of the Boltzmann equation is compared with the findings of the two-temperature model. It is found that phonon temperature obtained from the solution of the Boltzmann equation is lower than that corresponding to the two-temperature model, which is particularly true in the surface region of the aluminum film. Phonon temperature increases gradually while, early on, the electron temperature rises and decays sharply in the surface region of the aluminum film. PACS Nos.: 44.90.+c, 63.20.-e.Résumé : Nous étudions le transport de phonons dans un film mince d'aluminium et silicium, qui est générée par l'irradiation d'une courte impulsion laser sur la surface d'aluminium. Nous incorporons l'équation de Boltzmann dans la formulation de transport d'énergie dans le film et nous la modifions, afin d'inclure les sources volumétriques ressemblant à l'irradiation laser dans le film. La résistance limite thermique est située à l'interface des deux films. Nous introduisons une température d'équilibre équivalente pour vérifier la résistance thermique du film pendant le processus de chauffage par le laser. Nous comparons les températures de phonon obtenues de la solution de l'équation de Boltzmann avec celles obtenues du modèle à deux tempéra-tures et trouvons que les premières sont plus basses que les deuxièmes, ce qui est particulièrement vrai dans la région du film d'aluminium. La température des phonons augmente graduellement, alors que celle des électrons monte et décroît brusquement autour de la surface d'aluminium au début du processus. [Traduit par la Rédaction]

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“…Although phonon transport in thin films was studied previously [11][12][13][14][15], the main consideration was to predict phonon transport numerically for various conditions in thin films. However, the analytical solution to the energy transport was omitted due to the difficulties and complications faced in the solution.…”

Section: Introductionmentioning

confidence: 99%

Analytical solution for phonon transport across thin films

Al-Dweik

Journal of Non-Equilibrium Thermodynamics

2013