Laser-recrystallized polysilicon resistors for sensing and integrated circuits applications

Binder, J.; Henning, Wolfgang; Obermeier, Ε.; Schaber, H.; Cutter, D.

doi:10.1016/0250-6874(83)85064-1

Cited by 26 publications

(1 citation statement)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although evaluations using Rapid Thermal Annealing (RTA) as a post-implantation anneal have already been made [3, 51 among other forms of non-conventional annealing [6], a detailed study of the influence of RTA on the piezoresistive and electrical properties of silicon on insulator (SOI) structures is, to our knowledge, presented here to the first time.…”

Section: Introductionmentioning

confidence: 99%

Electrical And Piezoresistive Characterization Of Boron Doped Lpcvd Polycrystalline Silicon Under Rapid Thermal Annealing

Berre¹,

Kleimann²,

Scirmiache³

et al.

Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95

View full text Add to dashboard Cite

EXPERIMENTALRapid thermal annealing (RTA) has been performed on boron-implanted LPCVD polysilicon films for doses ranging from 2.IOl4 cm-2 to 4.1015 cm-2. We have investigated the piezoresistance through gauge factor measurements in the scope of pressure sensor applications and the electrical properties using Hall techniques. RTA was carried out at 1100°C for 20s, 40s and 60s respectively.Gauge factors and electrical parameters deduced from Hall effect measurements (resistivity, mobility, carrier density) are reported. We observe a reduction of the resistivity for longer RTA treatments which is due to an enhancement of the mobility. Moreover, the carrier concentration does not depend on the heat treatment duration. The gauge factor does not show a very strong dependence on the annealing duration but on the implantation dose. Finally thermal budgets with shorter duration (1 lOO"C, 5s) or lower temperature (lOSO"C, 20s) do not lead to uniform boron concentration throughout the film thickness.

show abstract

Section: Introductionmentioning

confidence: 99%