Electrical And Piezoresistive Characterization Of Boron Doped Lpcvd Polycrystalline Silicon Under Rapid Thermal Annealing

Berre, M. Le; Kleimann, P.; Scirmiache, B.; Barbier, D.; Pinard, P.

doi:10.1109/sensor.1995.721748

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…The experimental results reported by other researchers indicate that the gauge factor of polycrystalline silicon thicker films (around 400nm in thickness generally) has a maximum as the doping concentration is at the level of 10 19 cm -3 and then degrades rapidly with the further increase of doping concentration (Schubert, et al, 1987;French & Evens, 1989;Gridchin, et al, 1995;Le Berre, et al, 1996). Moreover, the gauge factor of highly doped polycrystalline silicon thicker films is only 20-25. It results in that the research works were emphasized on the medium doped polycrystalline silicon thicker films.…”

Section: Introductionmentioning

confidence: 92%

Solid State Circuits Technologies

Swart¹

2010

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he continued as collaborating professor at FEEC/UNICAMP. His experience is in the field of Electrical Engineering, with emphasis in materials and semiconductor devices, mainly on the following subjects: Si and GaAs integrated circuit technologies, CMOS, HBT, thin films, plasma etching and nanoelectronics. He was president of the Brazilian Microelectronics Society for two terms. He was member of CA-EE of CNPq for two terms and also member of the Deliberative Council of CNPq for 4 years. He is Distinquished Lecturer, chair of EDS Subcommittee for Regions/Chapters (SRC) for Region 9 and elected member of the Board of Governors of the Electron Device Society of IEEE. He is Fellow of IEEE.

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Section: Introductionmentioning

confidence: 92%

Solid State Circuits Technologies

Swart¹

2010

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“…With the above review, it can be seen that it is necessary to investigate the piezoresistive properties of polysilicon and built up the theoretical model. The experimental results reported by other researchers indicated that the GF of polysilicon common films (PSCFs, film thickness ≥ 200 nm) reaches the maximum as the doping concentration is at the level of 10 19 cm -3 , and then decreases drastically as doping concentrations are increased further [ 9 , 13 - 15 ]. Based on this phenomenon, the existing piezoresistive theories of polysilicon were established during 1980s∼1990s and used to predict the process steps for the optimization of device performance.…”

Section: Introductionmentioning

confidence: 99%

Piezoresistive Sensitivity, Linearity and Resistance Time Drift of Polysilicon Nanofilms with Different Deposition Temperatures

Changzhi

Liu

Chuai

2009

Sensors

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Our previous research work indicated that highly boron doped polysilicon nanofilms (≤100 nm in thickness) have higher gauge factor (the maximum is ∼34 for 80 nm-thick films) and better temperature stability than common polysilicon films (≥ 200nm in thickness) at the same doping levels. Therefore, in order to further analyze the influence of deposition temperature on the film structure and piezoresistance performance, the piezoresistive sensitivity, piezoresistive linearity (PRL) and resistance time drift (RTD) of 80 nm-thick highly boron doped polysilicon nanofilms (PSNFs) with different deposition temperatures were studied here. The tunneling piezoresistive model was established to explain the relationship between the measured gauge factors (GFs) and deposition temperature. It was seen that the piezoresistance coefficient (PRC) of composite grain boundaries is higher than that of grains and the magnitude of GF is dependent on the resistivity of grain boundary (GB) barriers and the weight of the resistivity of composite GBs in the film resistivity. In the investigations on PRL and RTD, the interstitial-vacancy (IV) model was established to model GBs as the accumulation of IV pairs. And the recrystallization of metastable IV pairs caused by material deformation or current excitation is considered as the prime reason for piezoresistive nonlinearity (PRNL) and RTD. Finally, the optimal deposition temperature for the improvement of film performance and reliability is about 620 °C and the high temperature annealing is not very effective in improving the piezoresistive performance of PSNFs deposited at lower temperatures.

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Application of Rapid Thermal Annealing on LPCVD Polysilicon Films for Piezoresistivity

et al. 1995

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Polycrystalline silicon is used as a transducing material in pressure microsensors. Its piezoresistive properties are strongly dependent on the processing steps and its properties -which define the sensor characteristics- vary sharply with temperature. LPCVD boron implanted polysilicon thin films have been annealed by RTA at 1100°C or below under conditions ensuring a uniform dopant distribution accross the film thickness. The resistivity as well as the gauge factor have been measured and compared with other authors' results. The gauge factor has been measured using the clamped beam technique between room temperature and 200°C with a specially designed apparatus. Technological parameters such as the Temperature Coefficient of Resistance (TCR) and the Temperature Coefficient of the Gauge Factor (TCK) are deduced as a function of doping. It appears that such coefficients do not satisfactorily describe the resistivity and gauge factor behavior at high temperature.

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Electrical And Piezoresistive Characterization Of Boron Doped Lpcvd Polycrystalline Silicon Under Rapid Thermal Annealing

Cited by 3 publications

References 14 publications

Solid State Circuits Technologies

Solid State Circuits Technologies

Piezoresistive Sensitivity, Linearity and Resistance Time Drift of Polysilicon Nanofilms with Different Deposition Temperatures

Application of Rapid Thermal Annealing on LPCVD Polysilicon Films for Piezoresistivity

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