Laser Mapping of SRAM sensitive cells. A way to obtain input parameters for DASIE calculation code

Miller, '; Buard,; Hubert, G.; Alestra,; Baudrillard,; Carrière, Véronique; Gaillard,; Palau,; Saigne,; Fouillat,

doi:10.1109/radecs.2005.4365588

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Cited by 5 publications

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“…A new method proposed in [22] allows their better estimation for a particular SRAM. The idea is to use laser mappings to get the size of the sensitive area.…”

Section: Discussion and Limitsmentioning

confidence: 99%

DASIE Analytical Version: A Predictive Tool for Neutrons, Protons and Heavy Ions Induced SEU Cross Section

Weulersse

Hubert

Forget

et al. 2006

IEEE Trans. Nucl. Sci.

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This paper presents the new detailed analysis of the secondary ion effect analytical version that allows fast and accurate calculation of neutron, proton and heavy ion cross sections in SRAM based memories. The advantage of this new version is a better determination of the input parameters using heavy ion data. A validation is presented by comparing simulation results with experimental data for technology from 600 to 180-nm.

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“…A new method proposed in [22] allows their better estimation for a particular SRAM. The idea is to use laser mappings to get the size of the sensitive area.…”

Section: Discussion and Limitsmentioning

confidence: 99%