Laser induced vaporization mass spectrometric studies on Si3N4

Joseph, Mathew; Sivakumar, N.; Manoravi, P.

doi:10.1016/s1387-3806(98)14016-2

Cited by 11 publications

(7 citation statements)

References 24 publications

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“…The power density used (7 × 10 5 W/cm 2 ) to obtain well‐resolved mass spectra using the RTOFMS (see Fig. 3) is far less than the threshold required for any isotope enrichment in the plume, which is ≈2 × 10 8 W/cm 2 , as found in a separate study using a quadrupole mass spectrometer in a crossed‐beam configuration and determination of 10 B/ 11 B ratio at different incident laser power densities 8…”

Section: Results Of Boron Ratio Measurements Using the Rtofms (Mcp Atmentioning

confidence: 90%

Determination of boron isotope ratio in boron carbide using a laser mass spectrometric method

Joseph

Sivakumar

Manoravi

et al. 2003

Rapid Comm Mass Spectrometry

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Section: Results Of Boron Ratio Measurements Using the Rtofms (Mcp Atmentioning

confidence: 90%

Determination of boron isotope ratio in boron carbide using a laser mass spectrometric method

Joseph

Sivakumar

Manoravi

et al. 2003

Rapid Comm Mass Spectrometry

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“…The velocities of the neutral species were mass dependent. It has been shown that ,, during laser ablation under thermal regime the neutral species are evaporated by the surface temperature rise due to the laser pulse heating. The evaporated species undergo a local thermal equilibrium 13,15 with the surface temperature and hence acquire kinetic energy accordingly.…”

Section: Methodsmentioning

confidence: 99%

Pulsed Laser Deposition of Doped Lanthanum Gallate and In Situ Analysis by Mass Spectrometry of the Laser Ablation Plume

et al. 2000

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Sr- and Mg-doped LaGaO3 powders with various dopant concentrations (La1 - x Sr x Ga1 - y Mg y O3 - ( x + y )/2 where 0.02 ≤ x ≤ 0.2 and 0.02 ≤ y ≤ 0.2) were synthesized through a novel solution combustion route. X-ray diffraction patterns indicate orthorhombic structure for compositions 0 ≤ x ≤ 0.075 and 0 ≤ y ≤ 0.075 and primitive − cubic for 0.1 ≤ x ≤ 0.2 and 0.1 ≤ y ≤ 0.2. Thin films of La1 - x Sr x Ga1 - y Mg y O3 - ( x + y )/2 (0.1 ≤ x ≤ 0.2 and 0.1 ≤ y ≤ 0.2) were deposited using both Nd:YAG (532 nm) and excimer (248 nm) lasers. The as-deposited films at room temperature were amorphous, which on annealing at 973 K exhibited single-phase cubic structure. Films deposited with excimer laser were smooth and particulate free compared to Nd:YAG laser deposition. The LSGM films on Si[111] and sapphire[0001] substrates showed good surface morphology compared to films on MgO[001] and amorphous quartz. Films were found to be slightly rich in Sr/La ratio compared to target composition. O+, O, Ga+, Ga, and La+ were the major species in the laser ablation plume with ion and neutral velocities of 3 × 105 and 3 × 104 cm/s, respectively.

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“…%. In the laser ablation of sintered Si 3 N 4 targets in a vacuum, Si-rich silicon nitride films are normally observed because Si-related species are more abundant than N-related species in the plume [7], [8]. On the other hand, C-rich silicon carbide films can be deposited during conditions of a low laser energy density of 2 J/cm 2 and a low repetition rate of 1 Hz [9].…”

Section: Amorphous Silicon Carbon Nitride Films Grown By the Pulsed Lmentioning

confidence: 99%

Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-Si₃N₄Mixed Target

Park¹,

Kim²,

Sung³

2004

ETRI J

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We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and Si3N4 powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target‐to‐substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30 ~ 70 wt.% SiC in the target to be an intermediate phase of SiC and SiNx. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target‐to‐substrate distance.

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Laser induced vaporization mass spectrometric studies on Si3N4

Cited by 11 publications

References 24 publications

Determination of boron isotope ratio in boron carbide using a laser mass spectrometric method

Determination of boron isotope ratio in boron carbide using a laser mass spectrometric method

Pulsed Laser Deposition of Doped Lanthanum Gallate and In Situ Analysis by Mass Spectrometry of the Laser Ablation Plume

Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-Si₃N₄Mixed Target

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Laser induced vaporization mass spectrometric studies on Si3N4

Cited by 11 publications

References 24 publications

Determination of boron isotope ratio in boron carbide using a laser mass spectrometric method

Determination of boron isotope ratio in boron carbide using a laser mass spectrometric method

Pulsed Laser Deposition of Doped Lanthanum Gallate and In Situ Analysis by Mass Spectrometry of the Laser Ablation Plume

Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-Si3N4Mixed Target

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Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-Si₃N₄Mixed Target