Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

Li, Pei; Guo, Hao; Guo, Qi; Zhang, Jinxin; Wei, Ying

doi:10.1088/0256-307x/32/8/088505

Cited by 5 publications

(3 citation statements)

References 14 publications

(5 reference statements)

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“…Moreover, it can be concluded that when the incidence is from the emitter center, the device is particularly susceptible to SEE. This phenomenon can be attributed to the fact that when an incident occurs from the emitter center, the incident track passes not only through the larger collector/substrate (CS) junction, which is the most sensitive position of the device, [20,21] but also through all electrode areas of the device. As a result, a significant potential collapse occurs, causing the electron-hole pairs to be quickly collected by drift under the action of the electric field to form a large transient current peak as shown in Figs.…”

Section: Setting Of Experimental Conditionsmentioning

confidence: 99%

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Feng 冯,

Guo 郭,

Liu 刘

et al. 2024

Chinese Phys. B

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In this article, the single event effect (SEE) sensitivity of silicon-germanium heterojunction bipolar transistor (SiGe HBT) device using 100 MeV proton irradiation was investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the proton crosses the larger collector-substrate (CS) junction. Furthermore, this article also conducted experimental studies using 100 MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiments are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current is significantly reduced. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the 100 MeV proton experiment. To further evaluate the tolerance of the device, the impact of proton on SiGe HBT after gamma-ray (60Coγ) irradiation was investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

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Section: Setting Of Experimental Conditionsmentioning

confidence: 99%

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Feng 冯,

Guo 郭,

Liu 刘

et al. 2024

Chinese Phys. B

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“…The SiGe HBT has been demonstrated to have good tolerance of displacement damage, but it is very vulnerable to single-event effects. [7][8][9] In addition, our previous work found that the TID irradiation did not cause significant failure on the SiGe HBT, but showed complicated responses under differ-ent bias conditions. [10,11] In this case, the synergistic effect of TID on SEEs becomes a key issue for the space applications of SiGe HBTs.…”

Section: Introductionmentioning

confidence: 99%

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

et al. 2018

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The synergistic effect of total ionizing dose (TID) on single event effect (SEE) in SiGe heterojunction bipolar transistor (HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 Co γ irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the γ irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the γ irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.

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“…This event can also result in significant charge collection through diffusion, thus making the sensitive area much larger than the area of the C-S junction. [16] The second technique is to form a p + buffer layer around the collector through ion implantation. This p + layer provides a region with a high rate of recombination with the excess electrons which are responsible for the charge collection on collector, thus the charge collection on collector will be reduced.…”

Section: Introductionmentioning

confidence: 99%

Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD*

Wei¹,

He²,

Li³

et al. 2019

Chinese Phys. B

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In this paper we investigate two techniques for single event effect (SEE) mitigation by using back junction and p+ buffer layer in non-deep trench isolation (DTI) domestic silicon–germanium heterojunction bipolar transistors (SiGe HBTs) based on technology computer aided design (TCAD) simulation. The effectiveness of the two mitigation techniques and the influence of various structure parameters are investigated. Simulation results indicate that the two techniques are more effective in reducing collector charge collection induced by heavy ions striking at positions outside the collector–substrate (C–S) junction where charge collection is dominated by diffusion. By properly adjusting the parameters, charge collection of events outside the C–S junction can be reduced by more than an order of magnitude, while charge collection of events in the device center is halved without affecting the direct current (DC) and alternating current (AC) characteristics of the SiGe HBTs.

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Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

Cited by 5 publications

References 14 publications

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD*

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Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

Cited by 5 publications

References 14 publications

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD*

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Product

Resources

About

Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD*