Laser-Induced Latchup Screening and Mitigation in CMOS Devices

McMorrow,; Buchner,; Baze,; Bartholet,; Katz,; O'Bryan,; Poivey,; LaBel,; Ladbury,; Maher,; Sexton,

doi:10.1109/radecs.2005.4365569

Cited by 7 publications

(5 citation statements)

References 14 publications

(17 reference statements)

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“…When integrated into the radiation design process, in particular, critical circuit evaluation with SPA laser testing will lead to cost-effective evaluation of potential soft error vulnerabilities of circuit elements, and then error rates may be estimated with follow-on neutron and alpha particle testing of the most promising circuit designs. Similar considerations are important for comparison of laser testing with heavy ion tests when evaluating soft error rates for space application of advanced ICs [17], [19]- [26].…”

Section: Discussionmentioning

confidence: 99%

“…But pulsed laser testing is strongly influenced by processing and layout variations of test structures and functional ICs. It is well known that device metallization can prevent laser light from reaching sensitive regions of a device [16,17]. Many questions remain, however, about the detailed impact of processing variables on pulsed-laser-induced SET response, including the effects of contact material and geometry, especially metal spacing and silicide processing.…”

Section: Introductionmentioning

confidence: 99%

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Effects of metal spacing and poly-silicon layers on pulsed-laser single event transient testing

Zeng

Gao

et al. 2014

2014 International Conference on Microelectronic Test Structures (ICMTS)

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This paper investigates the influence of metal spacing and poly-crystalline silicon gate and silicide technology on single event transients (SETs) occurring in pulsed laser irradiated test patterns based on 0.18 μm partially depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology. Laser-induced transients were measured and analyzed in detail, including SET rise time, fall time, pulse width, pulse maximum, and collected charge. The quantitative dependence of the SET characteristics on metal spacing and silicide processing is reported. This information is useful for optimal design of test structures to evaluate soft errors in integrated circuits.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of metal spacing and poly-silicon layers on pulsed-laser single event transient testing

Zeng

Gao

et al. 2014

2014 International Conference on Microelectronic Test Structures (ICMTS)

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“…If the laser continued to irradiate other sensitive areas, the current raised step by step until the power shut off. However, pulsed laser is different in the mechanism of energy deposition from heavy ion, and forward incident laser could hardly reach the sensitive areas covered by the metal layers, heavy ion testing is indispensable [12].…”

Section: Laser-induced See Testingmentioning

confidence: 99%

Single event effect hardness for the front-end ASICs in the DAMPE satellite BGO calorimeter

et al. 2016

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Dark Matter Particle Explorer (DAMPE) is a Chinese scientific satellite designed for cosmic ray study with a primary scientific goal of indirect detection of dark matter particles. As a crucial sub-detector, BGO calorimeter measures the energy spectrum of cosmic rays in the energy range from 5 GeV to 10 TeV. In order to implement highdensity front-end electronics (FEE) with the ability to measure 1848 signals from 616 photomultiplier tubes on the strictly constrained satellite platform, two kinds of 32-channel front-end ASICs, VA160 and VATA160, are customized. However, a space mission period of more than 3 years makes single event effect (SEE) a probable threat to reliability. In order to evaluate the SEE sensitivity of the chips and verify the effectiveness of mitigation methods, a series of laser-induced and heavy ion-induced SEE tests were performed. Benefiting from the single event latch-up (SEL) protection circuit for power supply, the triple module redundancy (TMR) technology for the configuration registers and optimized sequential design for data acquisition process, VA160 and VATA160 with the quantity of 54 and 32 respectively have been applied in the flight model of BGO calorimeter with radiation hardness assurance.

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“…W E have reported [1] on tests performed on NAND flash memories with the NRL pulsed laser [2] and the Micro-RDC Milli-Beam™ [3], comparing them with broad beam heavy ion results. These tests were part of an effort to investigate the underlying mechanisms for high current events that had been reported previously [4].…”

Section: Introductionmentioning

confidence: 99%

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

Oldham¹,

Friendlich

Wilcox

et al. 2012

IEEE Trans. Nucl. Sci.

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Pulsed laser test results for NAND flash memories are compared with broad beam heavy ion results and also with heavy ion results obtained with the collimated Milli-Beam™ source. The pulsed laser measurements reported here, with smaller focused spot sizes and as a function of the incident pulse energy, serve to reconcile the previously reported inconsistencies. The Milli-Beam™ and pulsed laser results appear to be consistent, and differences from the broad beam heavy ion results can be explained. The results suggest that the high current SEFIs reported by us and others arise from multiple ion (or multiple photon) interactions, and are not associated with single ion strikes.

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Laser-Induced Latchup Screening and Mitigation in CMOS Devices

Cited by 7 publications

References 14 publications

Effects of metal spacing and poly-silicon layers on pulsed-laser single event transient testing

Effects of metal spacing and poly-silicon layers on pulsed-laser single event transient testing

Single event effect hardness for the front-end ASICs in the DAMPE satellite BGO calorimeter

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

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