In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-µm single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and analyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test (DUT). The dependences of SET characteristics on drain-induced barrier lowering (DIBL) and the parasitic bipolar junction transistor (PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.
Single event transients (SETs) in a 100 series 0.18 m partially- depleted silicon-on-insulator (PDSOI) complementary metal oxide semiconductor (CMOS) inverter chain are studied by using pulsed laser. In this paper, effects of struck transistor type and struck locations on the threshold laser energy and the pulse width of SETs are investigated. Results show that the threshold laser energies at different locations are similar, but the threshold laser energies of n-channel metal-oxide-semiconductor (NMOS) transistors are much smaller than that of p-channel metal-oxide-semiconductor (PMOS) transistors. The SET pulse width of n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) is 427.5 ps as measured at the output terminal when the 2nd stage is irradiated, and 287.4 ps when the 100th stage is irradiated; the SET pulse width of p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is 295.9 ps as measured at the output terminal when the 1st stage is irradiated, and 150.5 ps when the 99th stage is irradiated. Both broadening rates are about 1.4 ps/stage. When the struck locations are close to the output terminal of the chain, the SET pulse is narrowed; however, when the struck nodes are close to the input terminal, the SET pulse is broadened. SET pulses are progressively broadened up when propagating is along inverter chains. A similar broadening rate in neither NMOSFET nor PMOSFET, indicates that the SET pulse broadening effect is caused by propagation, independent of the type of struck transistors. Through analysis, the charge of floating body-induced threshold voltage hysteresis in PDSOI transistors is the main cause of pulse broadening. The positive SET pulse observed on the oscilloscope, contrary to the expectation, is due to charging and discharging of the output node capacitor. Also, the observed sub-rail-to-rail swings of the SET pulses are due to the voltage division between the internal resistance of the oscilloscope and the resistance of the PMOS transistor.
This paper investigates the influence of metal spacing and poly-crystalline silicon gate and silicide technology on single event transients (SETs) occurring in pulsed laser irradiated test patterns based on 0.18 μm partially depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology. Laser-induced transients were measured and analyzed in detail, including SET rise time, fall time, pulse width, pulse maximum, and collected charge. The quantitative dependence of the SET characteristics on metal spacing and silicide processing is reported. This information is useful for optimal design of test structures to evaluate soft errors in integrated circuits.
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