Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

Abstract

a b s t r a c tIn this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J-V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency.

Laser-Induced Surface Modification for Photovoltaic Device Applications

“…The laser-induced forward transfer (LIFT) method is well developed, as described in a recent review article by Serra et al (Serra and Piqué 2019). Colina et al (2015) demonstrated the laser-induced forward transfer technique to create n-doped regions on p-type c-Si substrates. The laser processing not only transferred the doping material but also produced localized heating for enhanced diffusion of the dopant.…”

Υψηλής ταχύτητας εκτύπωση με laser μη νευτώνειων αγώγιμων μελανιών μεταλλικών νανοσωματιδίων για την ανάπτυξη μικροηλεκτρονικών διατάξεων

“…Μια εφαρμογή με πολύ μεγάλο βιομηχανικό ενδιαφέρον, στην οποία η τεχνική LIFT μπορεί να παίξει σημαντικό ρόλο, είναι η κατασκευή φωτοβολταϊκών. Η τεχνική LIFT έχει προταθεί για την δημιουργία περιοχών υψηλού ντοπαρίσματος στο μπροστινό [79] και στο πίσω [80] μέρος μίας ηλιακής κυψελίδας. Οι περιοχές αυτές, οι οποίες εκτυπώθηκαν από δότες άμορφου πυριτίου ντοπαρισμένου με φώσφορο, μειώνουν την σειριακή αντίσταση της κυψελίδας.…”

Parametrization and simulation of blister-actuated laser-induced forward transfer (BA-LIFT) and LIFT for high-viscosity pastes

“…for the transference of nanocomposite films through a small gap and kept in contact (Sakata et al, 2005). 2021), phosphor (Ferré et al, 2011;Colina et al, 2015) and antimony (Hoffmann, Röder and Köhler, 2012) have already been transferred as dopants by LTD techniques. Laser Molecular Implantation (LMI), sometimes referred to as Laser-Induced Molecular Implantation (LIMIT), allows the selective implantation of fluorescent molecules into a polymer film (Fukumura, Kohji and Masuhara, 1996), even in complex patterns such as typographic letters (Goto, Masahiro et al, 2004), or multifunctional organic molecular devices (Goto, Masahiro et al, 2004).…”