Laser Induced Damage Threshold of Silicon With Native and Artificial Sio2 Layer

Abstract

Spot size measurements of a 260 fs, 1030 nm focused spatially Gaussian pulsed laser beam were performed on a Silicon surface with native and thermally grown SiO 2 layers using a widely known method of evaluating laser beam energy dependent damage area. Single pulse laser induced damage thresholds of both samples were also measured. Modification of the thermally grown SiO 2 layer was analyzed in detail using optical, confocal and scanning electron microscopy. Restrictions in Gaussian beam spot size measurements on the samples with transparent coatings and several observable thresholds are discussed.

Shaping graphene with optical forging: from a single blister to complex 3D structures

“…The bulging of a SiO2 layer or other thin layer material is a pressure induced lift off by melting and vaporizing of the silicon layer underneath. [34][35][36] In graphene, bulging presumably occurs by the material's lattice expansion due to the presence of laser-induced defects. The obtained modification threshold value is also ~25 times lower than reported single-shot ablation threshold fluence for silicon, Fth(1)= 220 mJ/cm 2 ( = 515 nm, 3 ps).…”

Programmable quantum emitter formation in silicon

“…SOI samples pre-processed by carbon ion implantation and thermal annealing in forming gas were then subjected to fs laser pulses of varying fluences in the range ~16–48 mJ/cm 2 . This fluence range is ~4 times lower than the damage threshold of Si for fs-laser pulses 26 , 27 . Hence the Si lattice is not damaged, but fs-pulses in this fluence range can act on the H-bonds to atoms and defect structures in the silicon matrix.…”

Programmable quantum emitter formation in silicon

“…The pre-processed SOI was then subjected to fs laser pulses of varying fluences in the range ~16-48 mJ/cm 2 . This fluence range is ~4 times lower than the damage threshold of Si for fs-laser pulses 22,23 .…”