Laser grooving process development for low-k / ultra low-k devices

Beng, Lau Teck; Yew, Calvin Lo Wai; Shi, Koh Wen; Teck, Siong Chin; Yow, K. Y.

doi:10.1109/iemt.2008.5507881

Cited by 5 publications

(1 citation statement)

References 1 publication

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“…Nevertheless, dicing using laser technology is one of the significantly efficient and improving methods. [9][10] Laser technology works as a non-contact tool and offers a mandated micromachining process which is much more competitive than diamond blade saw. Laser process with tight focus results in diminished kerf width and reduces top-/bottom-side chipping and cracking.…”

Section: Introductionmentioning

confidence: 99%

An investigation on dicing 28-nm node Cu/low-k wafer with a Picosecond Pulse Laser

Hsu¹,

Chu²,

Liu³

et al. 2014

Journal of the Microelectronics and Packaging Society

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For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

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Section: Introductionmentioning

confidence: 99%

An investigation on dicing 28-nm node Cu/low-k wafer with a Picosecond Pulse Laser

Hsu¹,

Chu²,

Liu³

et al. 2014

Journal of the Microelectronics and Packaging Society

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3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process

Mohammad Nazri,

Yong,

Yusof

et al. 2024

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Purpose Die edge quality with its corresponding die strength are two important factors for excellent dicing quality especially for low-k wafers due to their weak mechanical properties and fragile structures. It is shown in past literatures that laser dicing or grooving does yield good dicing quality with the elimination of die mechanical properties. This is due to the excess heat energy that the die absorbs throughout the procedure. Within the internal structure, the mechanical properties of low-k wafers can be further enhanced by modification of the material. The purpose of this paper is to strengthen the mechanical properties of wafers through the heat-treatment process. Design/methodology/approach The methodology of this approach is by heat treating several low-k wafers that are scribed with different laser energy densities with different laser micromachining parameters, i.e. laser power, frequency, feed speed, defocus reading and single/multibeam setup. An Nd:YAG ultraviolet laser diode that is operating at 355 nm wavelength was used in this study. The die responses from each wafer are thoroughly visually inspected to identify any topside chipping and peeling. The laser grooving profile shape and deepest depth are analysed using a laser profiler, while the sidewalls are characterized by scanning electron microscopy (SEM) to detect cracks and voids. The mechanical strength of each wafer types then undergoes three-point bending test, and the performance data is analyzed using Weibull plot. Findings The result from the experiment shows that the standard wafers are most susceptible to physical defects as compared to the heat-treated wafers. There is improvement for heat-treated wafers in terms of die structural integrity and die strength performance, which revealed a 6% increase in single beam data group for wafers that is processed using high energy density laser output but remains the same for other laser grooving settings. Whereas for multibeam data group, all heat-treated wafer with different laser settings receives a slight increase at 4% in die strength. Originality/value Heat-treatment process can yield improved mechanical properties for laser grooved low-k wafers and thus provide better product reliability.

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Novel water-soluble protective adhesive for wafer's laser dicing

Sun

Yi³

et al. 2021

2021 22nd International Conference on Electronic Packaging Technology (ICEPT)

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Laser grooving process development for low-k / ultra low-k devices

Cited by 5 publications

References 1 publication

An investigation on dicing 28-nm node Cu/low-k wafer with a Picosecond Pulse Laser

An investigation on dicing 28-nm node Cu/low-k wafer with a Picosecond Pulse Laser

3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process

Novel water-soluble protective adhesive for wafer's laser dicing

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