2013
DOI: 10.1016/j.tsf.2013.09.056
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Laser-doping of crystalline silicon substrates using doped silicon nanoparticles

Abstract: Abstract:Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5 nm cw-laser. During laser processing the particles as well as a surface-near substrate layer are melted to subsequently crystallize in the same orientation as the substrate. The doping profile is investigated by secondary ion mass spectroscopy revealing a constant B concentration of … Show more

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Cited by 9 publications
(5 citation statements)
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“…[48][49][50]82 Boron dopant levels in nanocrystals produced with these methods have a reported range as follows: 10 18 -10 22 cm −3 . [23][24][25] Phosphorus dopant levels in these nanocrystals have a reported range as follows: 10 18 -10 22 cm −3 . 24,25,49,50 Several groups reported dopant concentration in atomic% instead of [dopant].…”
Section: Doping During Synthesismentioning
confidence: 98%
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“…[48][49][50]82 Boron dopant levels in nanocrystals produced with these methods have a reported range as follows: 10 18 -10 22 cm −3 . [23][24][25] Phosphorus dopant levels in these nanocrystals have a reported range as follows: 10 18 -10 22 cm −3 . 24,25,49,50 Several groups reported dopant concentration in atomic% instead of [dopant].…”
Section: Doping During Synthesismentioning
confidence: 98%
“…A wide range of chemical vapour deposition (CVD) processes have been employed for the fabrication of doped silicon NCs, including: low pressure chemical vapour deposition (LPCVD), 77 spray pyrolysis CVD, 23,66 very high frequency plasma CVD (VHF CVD), 78 plasma enhanced CVD (PECVD), 48,79,80 low pressure microwave plasma CVD, 24,25,[49][50][51]81 and non-thermal plasma CVD. 81 There has been a recent review of efforts to dope Si NCs synthesized by plasma routes.…”
Section: Doping During Synthesismentioning
confidence: 99%
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“…In comparison to PLAL, the gas-phase synthesis of nanoparticles has a higher output capacity, typically achieving 1 g h −1 of solid nanoparticles in laboratory scales, while bigger research or production facilities achieve productivities higher than 500 g h −1 [12]. However, nanoparticles produced in the gas phase are often severely aggregated, which can heavily limit the utilization of the intrinsic properties, complicate the dispersion and functionalization of the nanoparticles and pose substantial processing challenges.…”
mentioning
confidence: 99%
“…Methods for preparing doped SiQDs are routinely classified into the broad categories of in- and postsynthesis doping. In-synthesis doping incorporates dopant atoms into QDs during their formation and is typically achieved using chemical vapor deposition, , plasma synthesis, laser ablation, , and cosputtering. Defining the location of the dopant within the QDs while using these methods is nontrivial because it strongly depends upon reaction conditions, as well as the material properties of the Si host and chosen dopant . A common challenge known as “self-purification” arises for small (i.e., d < 6 nm) strongly confined QDs that expels dopants to the QD surface during in-synthesis doping.…”
Section: Introductionmentioning
confidence: 99%