Laser-doping of crystalline silicon substrates using doped silicon nanoparticles

Meseth, Martin; Lamine, Kais; Dehnen, M.; Kayser, Sven; Brock, W.; Behrenberg, Dennis; Orthner, Hans; Elsukova, Anna; Hartmann, Nils; Wiggers, Hartmut; Hülser, Tim; Nienhaus, Hermann; Benson, Niels; Schmechel, Roland

doi:10.1016/j.tsf.2013.09.056

Cited by 9 publications

(5 citation statements)

References 29 publications

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“…[48][49][50]82 Boron dopant levels in nanocrystals produced with these methods have a reported range as follows: 10 18 -10 22 cm −3 . [23][24][25] Phosphorus dopant levels in these nanocrystals have a reported range as follows: 10 18 -10 22 cm −3 . 24,25,49,50 Several groups reported dopant concentration in atomic% instead of [dopant].…”

Section: Doping During Synthesismentioning

confidence: 98%

“…A wide range of chemical vapour deposition (CVD) processes have been employed for the fabrication of doped silicon NCs, including: low pressure chemical vapour deposition (LPCVD), 77 spray pyrolysis CVD, 23,66 very high frequency plasma CVD (VHF CVD), 78 plasma enhanced CVD (PECVD), 48,79,80 low pressure microwave plasma CVD, 24,25,[49][50][51]81 and non-thermal plasma CVD. 81 There has been a recent review of efforts to dope Si NCs synthesized by plasma routes.…”

Section: Doping During Synthesismentioning

confidence: 99%

“…In this way it has been used to determine the dopant concentration profile with depth for both boron and phosphorus doped materials. 11,12,14,23,25,50,83 For example, Fig. 3 and 4 show SIMS data for P-and B-doped material, respectively.…”

Section: Elemental Analysismentioning

confidence: 99%

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Doping silicon nanocrystals and quantum dots

2016

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The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

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Section: Doping During Synthesismentioning

confidence: 98%

Section: Doping During Synthesismentioning

confidence: 99%

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Doping silicon nanocrystals and quantum dots

2016

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“…In comparison to PLAL, the gas-phase synthesis of nanoparticles has a higher output capacity, typically achieving 1 g h −1 of solid nanoparticles in laboratory scales, while bigger research or production facilities achieve productivities higher than 500 g h −1 [12]. However, nanoparticles produced in the gas phase are often severely aggregated, which can heavily limit the utilization of the intrinsic properties, complicate the dispersion and functionalization of the nanoparticles and pose substantial processing challenges.…”

mentioning

confidence: 99%

Pilot-scale synthesis of metal nanoparticles by high-speed pulsed laser ablation in liquids

2016

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The synthesis of catalysis-relevant nanoparticles such as platinum and gold is demonstrated with productivities of 4 g h(-1) for pulsed laser ablation in liquids (PLAL). The major drawback of low productivity of PLAL is overcome by utilizing a novel ultrafast high-repetition rate laser system combined with a polygon scanner that reaches scanning speeds up to 500 m s(-1). This high scanning speed is exploited to spatially bypass the laser-induced cavitation bubbles at MHz-repetition rates resulting in an increase of the applicable, ablation-effective, repetition rate for PLAL by two orders of magnitude. The particle size, morphology and oxidation state of fully automated synthesized colloids are analyzed while the ablation mechanisms are studied for different laser fluences, repetition rates, interpulse distances, ablation times, volumetric flow rates and focus positions. It is found that at high scanning speeds and high repetition rate PLAL the ablation process is stable in crystallite size and decoupled from shielding and liquid effects that conventionally occur during low-speed PLAL.

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“…Methods for preparing doped SiQDs are routinely classified into the broad categories of in- and postsynthesis doping. In-synthesis doping incorporates dopant atoms into QDs during their formation and is typically achieved using chemical vapor deposition, ,− plasma synthesis, laser ablation, , and cosputtering. − Defining the location of the dopant within the QDs while using these methods is nontrivial because it strongly depends upon reaction conditions, as well as the material properties of the Si host and chosen dopant . A common challenge known as “self-purification” arises for small (i.e., d < 6 nm) strongly confined QDs that expels dopants to the QD surface during in-synthesis doping.…”

Section: Introductionmentioning

confidence: 99%

Boron Doping of Silicon Quantum Dots via Hydrogen Silsesquioxane-Capped Diffusion for Photovoltaics and Medical Imaging

Milliken

Cheong

Cui

et al. 2022

ACS Appl. Nano Mater.

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Doped silicon quantum dots (SiQDs) with defined size, dopant distribution, and surface chemistry are highly sought after as a scientific curiosity because their unique properties offer a wide array of potential applications including multimodal medical imaging and photovoltaic devices. This report describes a diffusion-based postsynthesis doping method for incorporating high concentrations of B (2.5–5.0 at. %) into preformed SiQDs of predefined sizes while simultaneously maintaining their structure and morphology. The processing temperature, atmosphere, and QD size all strongly influence the resulting B-doped SiQDs. The as-synthesized doped SiQDs exhibit size-dependent photoluminescence spanning the visible to near-infrared spectral regions, are compatible with aqueous environments, and are readily rendered compatible with organic solvents upon functionalization with appropriate alkoxide surface groups. Being able to effectively tune the size and surface chemistry of the present B-doped SiQDs make them excellent candidates for use in targeted applications such as multimodal imaging and photovoltaic devices.

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Laser-doping of crystalline silicon substrates using doped silicon nanoparticles

Cited by 9 publications

References 29 publications

Doping silicon nanocrystals and quantum dots

Doping silicon nanocrystals and quantum dots

Pilot-scale synthesis of metal nanoparticles by high-speed pulsed laser ablation in liquids

Boron Doping of Silicon Quantum Dots via Hydrogen Silsesquioxane-Capped Diffusion for Photovoltaics and Medical Imaging

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