Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures

Маrmalyuk, А. А.; Davydova, Evgeniya I; Zverkov, M V; Konyaev, V P; Krichevsky, V.; Ладугин, М. А.; Lebedeva, E.; Petrov, Srebri; Sapozhnikov, S. M.; Симаков, В. А.; Uspenskiy, Mikhail B.; Yarotskaya, I. V.; Pikhtin, N. A.; Tarasov, I. S.

doi:10.1134/s1063782611040154

Cited by 7 publications

(2 citation statements)

References 10 publications

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“…Active region composition provided maximum electroluminescence in the 890-910 nm spectral range. We used a laser heterostructure with a narrow waveguide as the most technologically convenient solution providing a high emission efficiency at short cavity lengths for peak optical power of 40-50 W [9]. Unlike the heterostructure described in previous works [5], [6], the studied heterostructure provided spontaneous emission absorption only in the p-base region of the heterophototransistor.…”

Section: Experimental Samplesmentioning

confidence: 99%

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

Slipchenko

Podoskin

Rozhkov

et al. 2015

IEEE Photon. Technol. Lett.

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This letter shows an experimentally studied approach that increases injection efficiency of high-power laser thyristors emitting in the 890-910 nm spectral band. The developed laser thyristors exhibit 43-W maximum peak output power of laser pulses at 95-nm full width at half maximum duration. At the same time, the maximum amplitude of the current pulse generated in the laser-thyristor circuit reached 90 A.Index Terms-Laser-thyristor, semiconductor laser, thyristor heterostructure.

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Section: Experimental Samplesmentioning

confidence: 99%

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

Slipchenko

Podoskin

Rozhkov

et al. 2015

IEEE Photon. Technol. Lett.

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“…Several studies have shown that the epitaxial stacking of hetero-structures can provide effective scaling of differential quantum efficiency by the integration of high-efficiency active regions and tunnel junctions [13][14][15][16] . The developed laser stacks have the advantage of enhanced power and brightness.…”

Section: Introductionmentioning

confidence: 99%

High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction

et al. 2021

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We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous wave (QCW) peak power of 1.91 kW at 25 ℃ was demonstrated from a 1-cm wide bar with a 2-mm cavity length at 1 kA drive current (200 μs pulse width and 10 Hz repetition rate). Below the onset of the thermal rollover, the slope efficiency was as high as 2.23 W/A. The maximum power conversion efficiency of 61.1% at 25 ℃ was measured at 300 A. Reducing the heatsink temperature to 15 ℃ led to a marginal increase in the peak power to 1.95 kW.

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High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

Wang

Zhou

et al. 2014

Applied Physics Letters

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We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ∼51 nm at a center wavelength of 1060 nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

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Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures

Cited by 7 publications

References 10 publications

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction

High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

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