High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

Wang, Huolei; Yu, Haiming; Zhou, Xuliang; Kan, Qiang; Yuan, Lei; Chen, Weixi; Wang, Wei; Ding, Ying; Pan, Jiaoqing

doi:10.1063/1.4897436

Cited by 17 publications

(6 citation statements)

References 24 publications

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“…However, this approach is not very effective to reducing interior heating of the laser medium and increases complexity of the laser device. Other ways include the improvement of laser structures, such as the uses of asymmetric waveguide [8][9][10] and low-dimensional structures (quantum wires or dots) [11,12] as well as the application of the gain off-setting technique for single-frequency lasers [13]. With the asymmetric waveguide or simple low-dimensional structures, the improvement effect on reducing thermal-carrier loss for recombination is very limited.…”

Section: Introductionmentioning

confidence: 99%

Directly-coupled well-wire hybrid quantum confinement lasers with the enhanced high temperature performance

Tai

Wang

Duan

et al. 2023

J. Phys. D: Appl. Phys.

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It is well known that the laser diode performance will inevitably deteriorate when the device is heated. It has been a difficult issue to solve to date. In this letter, we are reporting a new solution to improve high-temperature performance of the laser diodes. The device uses a kind of directly-coupled well-wire hybrid quantum confinement (HQC) structure of the active medium based on the InGaAs-GaAs-GaAsP material system. This special HQC structure is constructed based on the strain-driven indium (In)-segregation effect and the growth orientation-dependent on-GaAs multi-atomic step effect. The measurement and analysis for the HQC laser sample show that the carrier leakage loss, the Auger recombination and gain-peak shifting due to heating are reduced in the HQC structure. It therefore increases the optical gain for lasing at high temperature. The power conversion efficiency is enhanced by > 57% and the threshold carrier density drops by > 24% at T ≥ 360 K, in comparison to the traditional quantum-well laser performance. A higher characteristic temperature of 240 K is obtained as well. It implies the better thermal stability of the HQC laser structure. These achievements show a significant prospect for developing high thermo-optic performance of laser diodes.

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Section: Introductionmentioning

confidence: 99%

Directly-coupled well-wire hybrid quantum confinement lasers with the enhanced high temperature performance

Tai

Wang

Duan

et al. 2023

J. Phys. D: Appl. Phys.

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“…Their inventions have revolutionized laser physics and have paved the way for the development of many disciplines in the past three decades, especially in the fields of biology, chemistry, and medicine [13][14][15][16][17]. As shown in Figure 1b, the interactions between photons and atoms include absorption of radiation, spontaneous emission, and stimulated emission [18][19][20]. The stimulated emission was first introduced by Albert Einstein in 1917 [21,22].…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Two-Dimensional Nanomaterials for Laser Protection

2019

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The Nobel Prize in Physics 2018, “For groundbreaking inventions in the field of laser physics”, went to Arthur Ashkin and Gérard Mourou and Donna Strickland. Their inventions have revolutionized laser physics and greatly promoted the development of laser instruments, which have penetrated into many aspects of people’s daily lives. However, for the purpose of protecting human eyes or optical instruments from being damaged by both pulsed and continuous wave laser radiation, the research on laser protective materials is of particular significance. Due to the intriguing and outstanding physical, chemical, and structural properties, two-dimensional (2D) nanomaterials have been extensively studied as optical limiting (OL) materials owing to their broadband nonlinear optical (NLO) response and fast carrier relaxation dynamics that are important for reducing the laser intensity. This review systematically describes the OL mechanisms and the recent progress in 2D nanomaterials for laser protection.

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“…In these tunnel junctions, the high-doping of the layers composing TJ plays a crucial role for optimizing and engineering device properties. Recently the slightly-doped tunnel junction semiconductor lasers have been reported to achieve the broadband stimulated emission [6], [7]. However, the mechanisms behind these principles are not revealed yet, furthermore, how the slightly-doped tunnel junction determine the laser performance also unrevealed in the reported literatures.…”

Section: Introductionmentioning

confidence: 99%

Quantum Well Laser Diodes with slightly-doped tunnel junction

Wang

et al. 2018

2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN)

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We experimentally investigate the electrical and optical characteristics of conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction N++GaAs/undoped-GaAs. The results show that the slightly-doped tunnel junction give significant role on the laser diodes performances in the InGaAs/GaAs quantum well material system. The TJ LD has a internal quantum efficiency of 21% and the loss is 6.9 cm-1 , the current threshold is 35 mA, both the lasers are operating at 1.06 μm, but the slightly-doped tunnel junction diode show nonlinear S-shaped current-voltage and broadband lasing characteristics. The results may also lead to the realization of more applications.

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High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

Cited by 17 publications

References 24 publications

Directly-coupled well-wire hybrid quantum confinement lasers with the enhanced high temperature performance

Directly-coupled well-wire hybrid quantum confinement lasers with the enhanced high temperature performance

Recent Progress in Two-Dimensional Nanomaterials for Laser Protection

Quantum Well Laser Diodes with slightly-doped tunnel junction

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