Abstract:We experimentally investigate the electrical and optical characteristics of conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction N++GaAs/undoped-GaAs. The results show that the slightly-doped tunnel junction give significant role on the laser diodes performances in the InGaAs/GaAs quantum well material system. The TJ LD has a internal quantum efficiency of 21% and the loss is 6.9 cm-1 , the current threshold is 35 mA, both the lasers are operating at 1.06… Show more
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