Laser CVD growth of graphene/SiC/Si nano-matrix heterostructure with improved electrochemical capacitance and cycle stability

Liu, Zhizhuang; Cai, Yilun; Tu, Rong; Xu, Qifeng; Hu, Meilong; Wang, Chongjie; Sun, Qiming; Li, Bao-Wen; Zhang, Song; Wang, Chuanbin; Goto, Takashi; Zhang, Lianmeng

doi:10.1016/j.carbon.2021.01.004

Cited by 21 publications

(12 citation statements)

References 39 publications

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“…Even at 5 mA cm −2 , the area specific capacitance can still achieve 57.31 mF cm −2 , implying that Si/ PM/rGO-PsAg has excellent electrochemical reversibility. Here, the satisfactory areal capacitance of Si/PM/rGO-PsAg is superior to most of those previously reported Si-based electrodes (Table S1): for instance, graphene/SiC/Si heterostructures 58 (2.4 mF cm −2 at 0.1 mA cm −2 ), ternary composites of Si/TiN/MnO 2 59 (39.7 mF cm −2 at 0.25 mA cm −2 ), and PEDOT/D/SiNWs composites 30 (9.5 mF cm −2 at 0.1 mA cm −2 ).…”

Section: Methodscontrasting

confidence: 46%

Facile Synthesis of Metal Oxide and Conductive Polymers around Silicon Nanowire Arrays for a High-Performance Aqueous Supercapacitor

Shen

Wang

Wei

et al. 2022

ACS Appl. Energy Mater.

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Si-based supercapacitors have drawn much attention due to their compatibility with current Si-based microelectronics. However, complicated and expensive manufacturing technologies greatly restrict their practical applications. In this work, a supercapacitor electrode based on metal oxide and conductive polymers around silicon nanowire arrays (SiNWs) was first designed with a simple, facile, and low-cost method. The manganese dioxide (MnO 2 ) and poly(3,4-ethylenedioxythiophene) (PEDOT) composite (PM) was coelectrodeposited on the SiNWs followed by spin-coating the high conductive poly(3,4-ethylenedioxythiophene):poly-(styrenesulfonate) (PEDOT:PSS) layer doped with silver nanowires (PsAg). Thin reduced graphene oxide (rGO) sheets were inserted between the PM and PsAg for further enhancing the capacity of the electrode. Resulting from the large gaps caused by the tetramethylammonium hydroxide (TMAH) solution treatment, a threedimensional (3D) hierarchical double-shelled structure of current collect layers (PsAg combined with rGO) and active material (PM) decorated SiNWs was formed (Si/PM/rGO-PsAg), which not only reduced the contact resistance between the active materials and current collector but also shortened the ion and electron diffusion paths. With the smart design, the prepared Si/PM/rGO-PsAg could be measured in an aqueous solution and exhibited outstanding electrochemical properties, including high areal capacitance (100.98 mF cm −2 at 1.5 mA cm −2 ) and excellent cycling stability (80.85% capacitance retention after 2000 cycles). Additionally, the practical applicability of the synthesized Si/PM/rGO-PsAg was investigated by fabricating a symmetric device, which displayed 85.91% retention over 5000 cycles and a maximum energy density of 0.0034 mWh cm −2 . Our design concept opens up an avenue to prepare 3D silicon nanostructures based on metal oxide and conductive polymers for low-cost and high-performance supercapacitors.

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Section: Methodscontrasting

confidence: 46%

Facile Synthesis of Metal Oxide and Conductive Polymers around Silicon Nanowire Arrays for a High-Performance Aqueous Supercapacitor

Shen

Wang

Wei

et al. 2022

ACS Appl. Energy Mater.

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“…70 It is well known that silicon-based SCs are considered as promising energy storage devices due to their compatibility with modern electronic devices and high energy density. 71 Benefiting from the compatibility of semiconductor properties and silicon processing technology, the preparation method of high-performance SiC-based electrodes is similar to that of Si-based electrodes. Furthermore, SiC is chemically inert compared with Si, which is used as an electrode material, making the application of SiC-based SCs more advantages, such as a wide operating temperature range.…”

Section: Advanced Novel Semiconductor Materials For Scsmentioning

confidence: 99%

“…In order to further improve the capacitive performance of the SiC electrode, the specific surface area of the electrode is increased. Liu et al 71 fabricated highly crystalline G/SiC nanomatrices on the surface of planar silicon and silicon nanowire arrays by laser chemical vapor deposition. The as-prepared G/SiC/SiNWs nanomatrix exhibits an areal capacitance value of 3.2 mF cm À2 , which is nearly 10 and 75 times higher than those of SiNWs and G/SiC/Si, respectively.…”

Section: Advanced Novel Semiconductor Materials For Scsmentioning

confidence: 99%

Novel semiconductor materials for advanced supercapacitors

et al. 2023

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“…Additionally, Liu et al fabricated highly crystalline graphene/3C-SiC nano-matrix on Si nanowires (G/SiC/SiNWs) for electric double-layer capacitors. [124] In Figure 8a, the G/SiC/SiNWs heterostructure exhibited a high area capacitance of 3.2 mF/cm 2 and a capacitance retention rate of 85% at a cyclic voltammetry (CV) scan rate of 50 mV/s and 100 mV/s, respectively. The inset in Figure 8a displayed the mechanism of electron transfer in the G/SiC/SiNWs nano-matrix heterostructure, the highly arranged nano-matrix heterostructure electrode provided more active sites for charge carrier storage and the fast ion transport pathways.…”

Section: Energy Storage Devicesmentioning

confidence: 99%

“…Reproduced with permission. [124] The specific capacitances of CSNWs and CSNWs-SiC with c. different scan rates and d. cycle number. Reproduced with permission.…”

Section: Energy Storage Devicesmentioning

confidence: 99%

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Liu

Fang

Yang

et al. 2022

J. Phys.: Condens. Matter

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Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.

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Laser CVD growth of graphene/SiC/Si nano-matrix heterostructure with improved electrochemical capacitance and cycle stability

Cited by 21 publications

References 39 publications

Facile Synthesis of Metal Oxide and Conductive Polymers around Silicon Nanowire Arrays for a High-Performance Aqueous Supercapacitor

Facile Synthesis of Metal Oxide and Conductive Polymers around Silicon Nanowire Arrays for a High-Performance Aqueous Supercapacitor

Novel semiconductor materials for advanced supercapacitors

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

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