Laser chemical vapour deposition of thin aluminium coatings

Shanov, V.; Ivanov, B.; Popov, C.

doi:10.1016/0040-6090(92)90104-j

Cited by 18 publications

(3 citation statements)

References 10 publications

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“…However, this feature is not necessarily a characteristic of the flash-based process, but instead might be attributed to the specific decomposition mechanism of TMA (53). For comparison, carbon levels up to 20 at-% have been reported for a CVD process utilizing TMA and hydrogen (55). The influence of the precursor dose on the growth rate was studied by varying the TMA partial pressure in processes with flash energy densities of 40 J/cm² (see Fig.…”

Section: Resultsmentioning

confidence: 99%

Flash-Lamp-Enhanced Atomic Layer Deposition of Thin Films

et al. 2014

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Within this work flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of flash-lamp-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum- and ruthenium-based thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. It is shown that the film growth is induced by the flash heating and that the processes exhibit typical ALD characteristics. The obtained relations between flash parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Besides, this work addresses technical challenges for the practical realization of this method and demonstrates the potential of this technology to extend the capabilities of thermal ALD.

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Section: Resultsmentioning

confidence: 99%

Flash-Lamp-Enhanced Atomic Layer Deposition of Thin Films

et al. 2014

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“…57 For comparison, carbon levels up to 20 at-% have been reported for a CVD process utilizing TMA and hydrogen. 59 The influence of the precursor dose on the growth rate was studied by varying the TMA partial pressure in processes with flash energy densities of 40 J/cm 2 (see Fig. 6).…”

Section: Studies On the Flash-enhanced Ald Of Aluminum-based Thin Filmentioning

confidence: 99%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. In both cases, the film growth is induced by the flash heating and the processes exhibit typical ALD characteristics such as layer-by-layer growth and growth rates smaller than one Å/cycle. The obtained relations between process parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Similar, substrate-dependent growth rates are attributed to the different optical characteristics of the applied substrates. Regarding the ruthenium deposition, a single-source process was realized. It was also successfully applied to significantly enhance the nucleation behavior in order to overcome substrate-inhibited film growth. Besides, this work addresses technical challenges for the practical realization of this film deposition method and demonstrates the potential of this technology to extend the capabilities of thermal ALD. Atomic layer deposition (ALD) is a specific thin film deposition method wherein film growth is based on a sequence of alternating saturated surface reactions. In a typical ALD process, this is realized by the alternating exposure of the substrate surface to two precursors, which are separated from each other by inert gas purging or chamber evacuation in order to prevent gas phase reactions. As a result, the film growth proceeds in a self-limiting manner and monolayer-by-monolayer, and thus, ALD enables the deposition of thin films with excellent uniformity and conformality as well as with sub-nanometer thickness control. Thanks to these unique characteristics, ALD has emerged as an important thin film deposition technique in semiconductor technology, e.g. in the fabrication of metal-insulator-metal (MIM) film stacks in high aspect ratio dynamic random access memory (DRAM) structures and gate dielectrics in transistors. In recent years, the use of ALD has also expanded into other fields such as optoelectronics, energy conversion and storage devices, micro-electro-mechanical-systems (MEMS) and nanotechnology. [1][2][3][4][5][6] Although a large number of materials have been deposited by ALD so far 1-6 for various applications, there are still a number of challenges in ALD. The deposition temperatures in ALD are mostly lower compared to chemical vapor deposition (CVD) processes due to the different mechanisms of film growth and the necessity to prevent precursor decomposition in order to keep the self-limiting growth behavior of ALD. As a consequence of the lower energy available for film formation, the films may not meet the properties required for the specific...

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“…In our previous works we faced the described disadvantages of using TMA as a precursor for LCVD of aluminium stripes [13][14][15] . This has motivated our research mto application of TMAA a l…”

Section: Introductionmentioning

confidence: 99%

LCVD of aluminium stripes obtained by pyrolysis of TMAA and TMA

1993

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Abstract-Maskless patterning of aluminium has been achieved by using visible light from a copper bromide vapor laser for pyrolytic decomposition of trimethylaluminium (TMA) and trimethylamine alane (TMAA). A silicon monocrystalline wafer was used as a substrate. The deposition was carried out at different process parameters (partial pressure of the precursors, laser power and scanning speed). The analysis of the resultant stripes included scanning electron microscopy, Auger electron spectroscopy, Talystep and electrical resistance measurements. The crystalline structure of the layers showed well-defined grains for both precursors. The Auger electron spectra indicated pure aluminium layers with small quantities of oxygen and carbon for stripes deposited from TMAA while those obtained from TMA were more contaminated. The difference in the layers composition for the used precursors resulted in their resistivity values. The low resistivities of aluminium stripes deposited from TMAA (up to 4.0 pC2.cm) makes it promising precursor for metalization with aluminium and especially for chemical vapor deposition enhanced with pulsed visible laser.

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Laser chemical vapour deposition of thin aluminium coatings

Cited by 18 publications

References 10 publications

Flash-Lamp-Enhanced Atomic Layer Deposition of Thin Films

Flash-Lamp-Enhanced Atomic Layer Deposition of Thin Films

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

LCVD of aluminium stripes obtained by pyrolysis of TMAA and TMA

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