Laser annealing effect of SiC films prepared by PECVD (plasma enhanced chemical vapor deposition)

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

“…The first group includes the techniques where plasma is generated in low-pressure discharges, such as a glow discharge [54], vacuum arc [55], HF- [56], or UHF- [57] discharge. The beam group includes the use of electron beams [58], laser radiation [59], and, in a number of cases, ion beams [60].…”

Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation

“…VI A and VI B and numerous previous works, [8][9][10][11][12][13][14][15][16][17][18][19][21][22][23][24][25] we know that ion implantation in SiC changes significantly the optical properties of the implanted layer. This is not specific to the Si-C bond, but in SiC this is more readily observed ͑even by naked eyes͒, as shown in Fig.…”

“…To avoid this critical step, recent research has focused on alternative techniques based on high-power pulsed laser annealing. [12][13][14][15][16][17][18] Since crystalline SiC has a very low absorption for visible light, mainly the ultraviolet ͑UV͒ light of excimer lasers at either 249 nm ͑KrF͒ or 308 nm ͑XeCl͒ has been used. This provides ͑at least partially͒ a substitute for oven annealing and, in addition, electrical activation could be established 17 and p-n junction formation demonstrated.…”