Laser annealed HfxZr1−xO2 high-k dielectric: Impact on morphology, microstructure, and electrical properties

Triyoso, Dina H.; Spencer, Greg; Hegde, Rama I.; Gregory, R.; Wang, Xiangdong

doi:10.1063/1.2898710

Cited by 17 publications

(7 citation statements)

References 14 publications

(13 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, REELS has been successfully used to investigate ultrathin gate oxide materials adopted in CMOS . Among the candidates of gate oxide materials in CMOS, Hf‐based and Zr‐based high‐ k gate dielectrics are highly promising and thus have been extensively studied . We focused on how to obtain the band gap and the optical properties of ultrathin gate oxide materials through a quantitative analysis of REELS spectra obtained from HfZrO 4 thin films.…”

Section: Introductionmentioning

confidence: 99%

Reflection electron energy loss spectroscopy for ultrathin gate oxide materials

Shin

Tahir

Seo

et al. 2012

Surface & Interface Analysis

View full text Add to dashboard Cite

The band alignment of HfZrO 4 gate oxide thin films on Si (100) deposited by the atomic layer deposition method has been investigated using reflection electron energy loss spectroscopy and XPS. The band gap of HfZrO 4 gate oxide thin film is 5.40 AE 0.05 eV. The valence band offset (ΔE v ) and the conduction band offset (ΔE c ) are 2.50 AE 0.05 eV and 1.78 AE 0.05 eV, respectively. These values satisfy the minimum requirement for the hole and electron barrier heights of larger than 1 eV for device applications. We have demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO 4 thin films provides us a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Reflection electron energy loss spectroscopy for ultrathin gate oxide materials

Shin

Tahir

Seo

et al. 2012

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…Also the electrical property of the HfZrO film as well as its microstructure depends on the thermal treatment method. The surface of the RTP (Rapid Thermal Processing) treated sample (1,000°C, 5 s) has rough morphology, whereas, laser annealed (1,325°C, spike) sample has smother surface and improved electrical characteristics [33]. Further analysis will be necessary for this issue.…”

Section: Doping Effectmentioning

confidence: 97%

Hf-Based High-k Gate Dielectric Processing

Niwa

2013

High Permittivity Gate Dielectric Materials

View full text Add to dashboard Cite

This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin film is introduced followed by detail study of these films from the materials science point of view, such as its crystallization and its control, carrier trapping and doping effect on the bulk high-k film. Finally, the device processing of the Field Effect Transistor including the CMOSFET with Hf-based high-k gate dielectric and metal gate electrode is discussed. Introductory RemarksIn accordance with the requirement of CMOS (Complimentary Metal Oxide Semiconductor) scaling, replacement of thermally grown SiO 2 gate dielectric with other dielectric materials of high dielectric constant (k) has become imperative. However, replacing of the SiO 2 conduces to a variety of other disadvantages and is not as simple as it may seem. Many challenges caused by different dielectric properties are to be conquered before the high-k dielectrics find practical use in industry. In spite of such difficult situations, thanks to intensive efforts, these insuperable difficulties have been solved gradually and finally CMOS with high-k/ metal gate stack for high performance application has been in commercial production in 2007 for the first time [1]. However, still many issues were left unsolved and have been addressed continuously to overcome them. Most of them come from the fact that Hf-based high-k dielectric materials are thermodynamically unstable and the nature of the electrovalent (ionic)-bonded HfO 2 is quite M. Niwa

show abstract

“…Because of the ultra short annealing duration, LSA temperature as high as 1300°C can be applied to HfSiON without inducing amorphous to crystalline phase change [15]. Better surface morphology and lower leakage have also been observed in hafnium based high-k films when annealed by laser [16].…”

Section: Applications To Advanced Cmosmentioning

confidence: 99%

“…The trend of reduced warpage with shorter annealing time stays the same. The impact of LSA on high-k/metal gate has been evaluated by several groups [14][15][16]. Thinner equivalent oxide thickness has been achieved due to reduced interfacial layer growth from lower thermal Fig.…”

Section: Feol Applicationsmentioning

confidence: 99%

Laser spike annealing and its application to leading-edge logic devices

Wang¹,

Chen²,

Shen³

et al. 2008

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors

View full text Add to dashboard Cite

Laser spike annealing (LSA) is a disruptive technology which has been successfully demonstrated for advanced junction engineering-creating highly activated ultra-shallow junctions with near diffusion-less boundaries. These produce higher performing devices with improved drive currents and/or lower leakage currents, and provide design engineers more opportunities for product enhancements. LSA has become the "process of record" for a majority of the industry's high-performance, logic device manufacturers.LSA produces more uniform temperature and stress distributions in product wafers than lamp-based short time annealing processes. Furthermore, LSA is compatible with new materials such as strained Si, SiGe, high-k and metal gates, and is extendable to new device structures. This paper will review the current LSA capabilities, process and integration methods, summarize its unique capabilities to reduce temperature-induced stress and misalignment, and discuss future opportunities both in junction engineering and other integration areas.

show abstract

Laser annealed HfxZr1−xO2 high-k dielectric: Impact on morphology, microstructure, and electrical properties

Cited by 17 publications

References 14 publications

Reflection electron energy loss spectroscopy for ultrathin gate oxide materials

Reflection electron energy loss spectroscopy for ultrathin gate oxide materials

Hf-Based High-k Gate Dielectric Processing

Laser spike annealing and its application to leading-edge logic devices

Contact Info

Product

Resources

About