Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

SET and noise fault tolerant circuit design techniques: Application to 7nm FinFET

“…Q represents the injected charge, and τf, τr are the fall and rise time constants of the current generated by the ion, that depend on particle impact location [33]. The critical charge (Qcrit) is known as the largest charge that can be injected into a sensitive node without changing its logical state.…”

“…This magnitude mainly depends on both the width and amplitude of the current pulse [36]. In the literature, several values of injected charge and time constants have been reported in function to the approximation and the technology implemented [33]. These parameters have a direct relationship with the technology node, and to the best of our knowledge and beliefs, the nearest test made to the 7 nm FinFET was performed by [33][37] with 5nm.…”

“…In the literature, several values of injected charge and time constants have been reported in function to the approximation and the technology implemented [33]. These parameters have a direct relationship with the technology node, and to the best of our knowledge and beliefs, the nearest test made to the 7 nm FinFET was performed by [33][37] with 5nm. In these works the hit beam is generated with a backside laser with irradiation controlling its location from the fins underneath the drain.…”

“…Therefore, to cover the location where the ion falls, and the energy required, a sweep of both parameters (the injected charge and the time constants) has been undertaken in order to ensure the effects in all possible situations. Subsequently the injected charge is swept from zero to a maximum of 45 fC as stated in [33] for 5 nm FinFETs, and the time constant from 1 ps to 30 ps, values that have been calculated by scaling the results from 20nm FinFET in [37]. The Fall Time Constant has been chosen as 2.2 times of the Rise Time [37].…”

Modeling of radiation-induced single event transients in SOI FinFETS

“…Moreover, the combination of a buried oxide layer, Silicon-on-Insulator (SOI), with FinFET technology leads to high performance devices with reduced silicon volume. Indeed, SOI FinFET technology is an excellent candidate for applications in which radiation-induced soft errors are a significant constraint [3]- [5]. Based on this context, it is important for semiconductor manufacturers and designers to evaluate the susceptibility of tri-gate devices to soft errors induced by energetic particles such as secondary ions induced by neutrons or protons, alpha particles, and heavy ions.…”