Large Transverse Piezoelectricity in Strained (Na,Bi)TiO₃–BaTiO₃Epitaxial Thin Films on MgO(110)

Abstract

Large transverse piezoelectricity has been demonstrated in lead-free epitaxial (Na,Bi)TiO 3 -BaTiO 3 (NBT-BT) thin films grown on MgO(110) substrates. Through the internal strain caused by the difference in thermal expansion between NBT-BT and MgO, the crystal structure of the films was distorted to orthorhombic lattice, which does not form in bulk NBT-BT. The films showed a planar anisotropic nature where the effective transverse piezoelectricity along the orthorhombic b-axis was much larger than that along the orthorhombic a-axis. For the NBT-BT film with 9% BaTiO 3 , transverse piezoelectric coefficient d à 31 along the orthorhombic b-axis reached as high as À221 pC/N.

Effects of Zr doping content on microstructure, ferroelectric and dielectric properties of Na0.5Bi0.5TiO3 thin film

“…For the enhancement of electrical properties for NBT film, considerable efforts have been made, such as introduction of buffer layer [3], preparation of epitaxial film with reduced charge defects [4] and making solid solutions with other perovskites [5]. In addition, doping technique with suitable ions at A/B site has been considered as an effective way for the modification of NBT thin film.…”

Effect of Fe doping on the crystallization and electrical properties of Na0.5Bi0.5TiO3 thin film

“…In recent years, people are trying to improve electrical properties for NBT thin film by a variety of methods, such as cation substitution [5], formation of multilayered structure [6], control of orientation [7], and forming solid solutions with other components [8][9][10][11][12]. Among them, site engineering is supposed to be an available way, not only for reducing the leakage current but also for improving the ferroelectric property of NBT film [13].…”

Piezoelectric properties of lead-free (Na0.5Bi0.5)0.95Ba0.05TiO3 thin films on polycrystalline nickel foils

“…Especially, the Asite complex perovskite (Na 0.5 Bi 0.5 )TiO 3 (BNT) system have been considered to be one of the most important promising candidates because of its excellent ferroelectric and piezoelectric properties [10][11][12][13][14][15]. BNT thin films have been fabricated on various oxide single-crystal substrates using a broad spectrum of techniques [16][17][18][19][20][21]. However, it is well known that the singlecrystal oxide substrates have high cost and limited sizes.…”