2015
DOI: 10.1016/j.matlet.2014.10.111
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Effects of Zr doping content on microstructure, ferroelectric and dielectric properties of Na0.5Bi0.5TiO3 thin film

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Cited by 16 publications
(4 citation statements)
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“…Moreover, it can be seen that the average size of the crystalline grains gradually decreases with the increases of doping amount due to the inhibition effect of the dopant. Similar phenomenon has been reported in Zr-doped NBT films [6]. A clear interface between film and substrate can be observed and the film thickness is about 500 nm, which is used for calculating the relative dielectric permittivity.…”
Section: Introductionsupporting
confidence: 81%
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“…Moreover, it can be seen that the average size of the crystalline grains gradually decreases with the increases of doping amount due to the inhibition effect of the dopant. Similar phenomenon has been reported in Zr-doped NBT films [6]. A clear interface between film and substrate can be observed and the film thickness is about 500 nm, which is used for calculating the relative dielectric permittivity.…”
Section: Introductionsupporting
confidence: 81%
“…It has a relatively large remanent polarization (P r =38 μC/cm 2 ) and high Curie temperature (T c =320 1C) [5]. However, for the thin film form, it suffers the drawback of the serious leakage problem, which is caused by the high volatility of A-site elements and partial valance transfer of B-site element during the annealing process [6]. Until now, several approaches have been focus on improving the insulating property of the NBT-based thin films, such as optimization of growth conditions [7], construction of multilayer structure [8], and site-engineering [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, doping isovalent ions may not generate any additional charge carriers and the performance can be tailored by the introduction of lattice distortion. In our recent study, enhanced ferroelectricity is achieved in Zr 4 þ -doped NBT thin film with a P r value of 19.2 μC/cm 2 [7]. However, doping isovalent ions cannot n do any help to the decrease of leakage current.…”
Section: Introductionmentioning
confidence: 93%
“…Precursor chemistries based on 2-methoxyethanol (2-MOE) or other organic solvents have achieved the role of a standard which other CSD methods are often compared to [12,13]. Synthesis routes employing 2-MOE have been developed for, among others, PZT [12], K1xNaxNbO3 (KNN) [14] and BaTiO3 (BT) [15], as well as for BNT [16,17,18,19,20,21,22]. However, 2-MOE and other organic solvents are both toxic and expensive, and aqueous thin film processing is therefore desirable.…”
Section: Introductionmentioning
confidence: 99%