Large-signal time-domain modeling of avalanche diodes

Giblin, R.A.; Seeds, A.J.

doi:10.1109/t-ed.1979.19676

Cited by 29 publications

(2 citation statements)

References 16 publications

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“…A large-signal time-domain computer model of the optically controlled impatt has therefore been developed from the earlier avalanche diode modelling work of Blakey et al [7]. The model is based on the solution in one spatial dimension and time of the drift-diffusion approximation to Boltzmann's transport equation, the equations for electron and hole continuity, and Gauss' theorem within the semiconductor material of the device.…”

Section: Computer Modelling Studiesmentioning

confidence: 99%

Optical control of W-band impatt oscillators

Singleton¹,

Seeds²,

Brunt

1986

IEE Proc. J Optoelectron. UK

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Results are presented for analytical computer modelling and experimental studies of optically induced frequency tuning of W-Band (75-110 GHz) impatt oscillators. Predictions from an analytical theory are compared with those from a large-signal time-domain computer model, and the effect of unequal electron and hole ionisation coefficients on the tuning performance is illustrated. Experimental measurements are presented showing an optical tuning range of about 10 MHz for an optically generated current of 20 jiA, and comparisons are made with the theoretical predictions.

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Section: Computer Modelling Studiesmentioning

confidence: 99%

Optical control of W-band impatt oscillators

Singleton¹,

Seeds²,

Brunt

1986

IEE Proc. J Optoelectron. UK

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“…Because transport models based on drift-diffusion assume local equilibrium between the carrier velocity and the electric field, they are incapable of simulating such non-equilibrium phenomena. [1][2][3] This has been the primary motivation for development of advanced semiclassical transport models over the past decade.…”

Section: Introductionmentioning

confidence: 99%

An efficient velocity–space model of carrier transport in Gallium Arsenide

Dunn¹,

Araújo

1991

Int J Numerical Modelling

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SUMMARYA new GaAs carrier transport modelling methodology is presented, designed to address the competing needs of microscopic detail and of computational efficiency. The rationale for advanced semiclassical models based on the Boltzmann transport equation (BTE) are reviewed and discussed in terms of the unique properties of GaAs. A new methodology is then presented, formulated around a one-dimensional velocity-space variable. It includes a realistic description of the GaAs band structure including multiple valleys, nonparabolicity, and anisotropy, which is used to explicitly evaluate the scattering distributions, and rates, for different scattering mechanisms. These in turn allow a direct evaluation of the BTE scattering inegral, which is solved iteratively with the non-scattering terms. Based on this methodology, a prototype model is shown to reproduce the GaAs velocity-field relationship in homogeneous, undoped material. Band structure and forward-scattering effects are clearly visible in the model's solutions for the carrier velocity distribution. The model's computational simplicity, combined with a finer level of detail, makes it suitable for device simulation without invoking Monte Carlo or other computationally intensive methods.

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Nonlinear circuit analysis using the method of harmonic balance—a review of the art. II. Advanced concepts

Gilmore

Steer

1991

Int. J. Microw. Mill.‐Wave Comput.‐Aided Eng.

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The harmonic balance method is a technique for the numerical solution of nonlinear analog circuits operating in a periodic, or quasi-periodic, steady-state regime. The method can be used to efficiently derive the continuous-wave response of numerous nonlinear microwave components including amplifiers, mixers, and oscillators. Its efficiency derives from imposing a predetermined steady-state form for the circuit response onto the nonlinear equations representing the network, and solving for the set of unknown coefficients in the response equation. Its attractiveness for nonlinear microwave applications results from its speed and ability to simply represent the dispersive, distributed elements that are common at high frequencies.The last decade has seen the development and application of harmonic balance techniques to model analog circuits, particularly microwave circuits. The first part of this article reviewed the fundamental achievements made during this time. In this part, the extension of the method to quasi-periodic regimes, optimization analysis, oscillator analysis, studies of various convergence strategies, and practical applications are discussed. A critical assessment of the various types of harmonic balance techniques is given. Examples of designs which have been modeled using the harmonic balance technique and built both in hybrid and MMIC form are presented.

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Large-signal time-domain modeling of avalanche diodes

Cited by 29 publications

References 16 publications

Optical control of W-band impatt oscillators

Optical control of W-band impatt oscillators

An efficient velocity–space model of carrier transport in Gallium Arsenide

Nonlinear circuit analysis using the method of harmonic balance—a review of the art. II. Advanced concepts

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