Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

Angelov, I.; Andersson, Kristoffer; Schreurs, Dominique; Xiao, Dongping; Rorsman, Niklas; Desmaris, Vincent; Sudow, M.; Zirath, Herbert

doi:10.1109/apmc.2006.4429422

Cited by 113 publications

(73 citation statements)

References 9 publications

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“…Here, the device will not be under high stress voltages to stimulate additional surface or buffer trapping effects [15], and the current dispersion can be attributed mainly to the self-heating effect. g method can then be used to solve (6) and (7) and to find the optimal value of K T . The calculated value of K T for the analyzed 4-W device is 0.09.…”

Section: Equivalent Circuit Modelmentioning

confidence: 99%

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Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design

Jarndal

Aflaki

Negra

et al. 2010

Int J RF and Microwave Comp Aid Eng

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A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT, and the developed model is validated by comparing its small-and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F PA. Very good agreement between the amplifier simulation and measurement shows the validity of the model.

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Section: Equivalent Circuit Modelmentioning

confidence: 99%

“…There are many published models for GaN HEMT devices [5][6][7][8]. However, the body of the literature on this subject remains relatively limited, particularly in switching-mode of operation.…”

Section: Introductionmentioning

confidence: 99%

Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design

Jarndal

Aflaki

Negra

et al. 2010

Int J RF and Microwave Comp Aid Eng

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“…However, this large signal model is complicated and needed a lot of time to simulate, whereas the SMPA operates in only two states, the on-and off-states. Therefore, the simplified switchbased model is sufficient to predict the switching operation of CMCD PA and has been studied by several groups [18][19][20]. The simplified switch-based model in the desired bias condition can be extracted by small-signal modeling of FET, which was pro- posed in 1988 by Dambrine et al [21].…”

Section: Simplified Switch-based Model Of a Gan Transistormentioning

confidence: 99%

Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design

Park¹,

Yoo²,

Kim³

et al. 2014

Journal of electromagnetic engineering and science

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This paper presents a characteristic evaluation of commercial gallium nitride (GaN) transistors having two different gate-lengths of 0.4-μm and 0.25-μm in the design of a class-S power amplifier (PA). Class-S PA is operated by a random pulse-width input signal from band-pass delta-sigma modulation and has to deal with harmonics that consider quantization noise. Although a transistor having a short gate-length has an advantage of efficient operation at higher frequency for harmonics of the pulse signal, several problems can arise, such as the cost and export license of a 0.25-μm transistor. The possibility of using a 0.4-μm transistor on a class-S PA at 955 MHz is evaluated by comparing the frequency characteristics of GaN transistors having two different gate-lengths and extracting the intrinsic parameters as a shape of the simplified switch-based model. In addition, the effectiveness of the switch model is evaluated by currentmode class-D (CMCD) simulation. Finally, device characteristics are compared in terms of current-mode class-S PA. The analyses of the CMCD PA reveal that although the efficiency of 0.4-μm transistor decreases more as the operating frequency increases from 955 MHz to 3,500 MHz due to the efficiency limitation at the higher frequency region, it shows similar power and efficiency of 41.6 dBm and 49%, respectively, at 955 MHz when compared to the 0.25-μm transistor.Key Words: Cass-S amplifier, Current-Mode Amplifier, Gallium Nitride (GaN), Gate-Length, Switch-Mode Amplifier. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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“…We employed the frequently-used Angelov model [19], which was commonly known as the GaN HEMT model. Figure 9 shows an equivalent circuit of the Angelov GaN HEMT model [20].…”

Section: Equivalent Circuit Device Modelingmentioning

confidence: 99%

Millimeter-Wave GaN HEMT for Power Amplifier Applications

Joshin

Makiyama

Ozaki

et al. 2014

IEICE Trans. Electron.

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SUMMARY Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency f T of 113 GHz and maximum oscillation frequency f max of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.

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Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

Cited by 113 publications

References 9 publications

Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design

Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design

Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design

Millimeter-Wave GaN HEMT for Power Amplifier Applications

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