Millimeter-Wave GaN HEMT for Power Amplifier Applications

Joshin, K.; Makiyama, Kozo; Ozaki, Shiro; Ohki, Takao; Okamoto, Naoya; Niida, Yoshitaka; Sato, Masaru; Masuda, S.; Watanabe, Keiji

doi:10.1587/transele.e97.c.923

Cited by 18 publications

(13 citation statements)

References 18 publications

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“…19. Another novel approach is the CMOS gate driver flip-chip assembled with GaN devices together on the IPD substrate, which minimizes the parasitic effects caused by bonding wires [97]. The PCB embedded inductor is also a solution to low parasitic IPDs [98].…”

Section: Gan Power Integration Road Aheadmentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

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Section: Gan Power Integration Road Aheadmentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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“…Fig. 5 shows the equivalent circuit of the Angelov GaN HEMT model [29], [31]. Model parameters were extracted from the measured DC ID-VD and S-parameters of the fabricated HEMT.…”

Section: Millimeter-wave Gan Device Modelingmentioning

confidence: 99%

“…We extracted the VDS dependence of the output resistance RDS and the capacitance CDS in Fig. 7 from the measured S22 at 2 GHz [28] with the following simplified admittance equation:…”

Section: Millimeter-wave Gan Device Modelingmentioning

confidence: 99%

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Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

Sato

Niida

Yamada

et al. 2021

IEICE Trans. Electron.

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This paper presents recent progress on high frequency and wide bandwidth GaN high power amplifiers (PAs) that are usable for highdata-rate wireless communications and modern radar systems. The key devices and design techniques for PA are described in this paper. The results of the state-of-the art GaN PAs for microwave to millimeter-wave applications and design methodology for ultra-wideband GaN PAs are shown. In order to realize high output power density, InAlGaN/GaN HEMTs were employed. An output power density of 14.8 W/mm in S-band was achieved which is 1.5 times higher than that of the conventional AlGaN/GaN HEMTs. This technique was applied to the millimeter-wave GaN PAs, and a measured power density at 96 GHz was 3 W/mm. The modified Angelov model was employed for a millimeter-wave design. Wband GaN MMIC achieved the maximum Pout of 1.15 W under CW operation. The PA with Lange coupler achieved 2.6 W at 94 GHz. The authors also developed a wideband PA. A power combiner with an impedance transformation function based on the transmission line transformer (TLT) technique was adopted for the wideband PA design. The fabricated PA exhibited an average Pout of 233 W, an average PAE of 42 %, in the frequency range of 0.5 GHz to 2.1 GHz.

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“…The empirical modeling method has been widely used due to their excellent performance in convergence and accuracy [ 17 , 18 , 19 , 20 , 21 , 22 ]. An effective validation of large signal model is validated by on-wafer load-pull measurement [ 23 , 24 ]. However, due to the complication of load-pull measurement, only one input/output impedance is validated.…”

Section: Introductionmentioning

confidence: 99%

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

Mao

et al. 2018

Micromachines

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An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.

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Millimeter-Wave GaN HEMT for Power Amplifier Applications

Cited by 18 publications

References 18 publications

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

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