Large-Signal Microwave Performance Prediction of Dual-Gate GaAs MESFET Using an Efficient and Accurate Model (Short Paper)

Madjar, A.; Dreifuss, J.

doi:10.1109/tmtt.1985.1133046

Cited by 11 publications

(4 citation statements)

References 10 publications

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“…The LD parameters for this simulation are shown in Table 1. The equivalent circuit used to model the DG-FET is shown in Figure 2 [4]. By using this equivalent circuit and an optimization computer program, the circuit parameters are optimized in order to obtain the best fit between the calculated three-port S parameters and those measured.…”

Section: Laser Diode and Dual Gate Mesfet Modelsmentioning

confidence: 99%

Dual gate mesfet for flat microwave response of directly modulated laser diode

Rocco

Salles

1989

Micro & Optical Tech Letters

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Section: Laser Diode and Dual Gate Mesfet Modelsmentioning

confidence: 99%

Dual gate mesfet for flat microwave response of directly modulated laser diode

Rocco

Salles

1989

Micro & Optical Tech Letters

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“…where Y in is the input admittance at a> k in gate i (i = 1, 2), and ' * Y out , -(Z 33 ),-, -Y Dl (10) where Y outt is the output admittance at co t in drain (port 3), Y Gik is the generator admittance in gate i (i = 1, 2) at (o k and Y Dl is the load admittance in the drain (port 3) at co,. The Z-matrix used in eqns.…”

Section: Large-signal Analysis Phasementioning

confidence: 99%

New method for the analysis of dual-gate MESFET mixers

Dreifuss¹,

Madjar²,

Bar‐Lev

1987

IEE Proc. H Microw. Antennas Propag. UK

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A method for the analysis of a microwave mixer based on a dual-gate MESFET is presented. The method extends a previously published analysis technique for a single-gate MESFET mixer by treating the circuit as a threeport network. The device is described by a complete mathematical model and the harmonic balance technique is utilised for the large-signal analysis stage. This results in a relatively fast program. The method is demonstrated by applying it to the simulation of a mixer based on a Raytheon transistor RDX832 for which device data was available. The mixer was constructed and its experimentally obtained performance results show good agreement between the simulated and the measured conversion gain values through a wide range of local-oscillator input power.

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“…For HEMT devices, recent studies and literatures have become popular, but generally for single-gate structures. [5][6][7][8][9] Since the dual-gate HEMT device was fabricated, several small-signal, 10,11 and large-signal 12 models have been proposed. Dual-gate HEMTs have the advantages of higher gain, higher stability, and controllable gain compared with single-gate HEMTs.…”

Section: Introductionmentioning

confidence: 99%

A complete small‐signal model of GaAs dual‐gateHEMT

Huang

Chen

2022

Int J Numerical Modelling

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A complete small‐signal model of dual‐gate HEMT is proposed, considering the parasitic element effects. To extract the intrinsic elements accurately, the parasitic elements are eliminated by using a new method in this paper. It is realized by constructing two simple three‐port matrices and eliminating them with the features of π‐type and T‐type networks. This method is fast and accurate. Dual‐gate HEMTs could be regarded as a cascode connection of two single‐gate HMETs. A dual‐gate HEMT is fabricated on a commercial 0.25 μm GaAs technology to verify the proposed the extraction method. The result shows a good agreement between measured and simulated data over a wide frequency range.

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Large-Signal Microwave Performance Prediction of Dual-Gate GaAs MESFET Using an Efficient and Accurate Model (Short Paper)

Cited by 11 publications

References 10 publications

Dual gate mesfet for flat microwave response of directly modulated laser diode

Dual gate mesfet for flat microwave response of directly modulated laser diode

New method for the analysis of dual-gate MESFET mixers

A complete small‐signal model of GaAs dual‐gateHEMT

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