A dual gate GaAs MESFET (DG‐FET) driver is designed to obtain a flat frequency response from a direct intensity modulated semiconductor laser diode. The DG‐FET input and output matching circuits are designed to compensate the laser diode intrinsic frequency response in a band from 0.3 to 2.0 GHz. A frequency response flatness improvement of more than 15 dB is obtained.
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