Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics

Liu, Xi; Long, Yun-Ze; Liao, Lei; Duan, Xiangfeng; Fan, Zhiyong

doi:10.1021/nn204848r

Cited by 204 publications

(177 citation statements)

References 105 publications

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“…More generally, the proposed fabrication approach might enable a fast and reliable synthesis and device integration of bulk quantities of hybrid Si nanowires with controllable characteristics (24)(25)(26).…”

Section: Resultsmentioning

confidence: 99%

Roll up nanowire battery from silicon chips

Vlad

Reddy

Ajayan

et al. 2012

Proc. Natl. Acad. Sci. U.S.A.

122

106

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Here we report an approach to roll out Li-ion battery components from silicon chips by a continuous and repeatable etch-infiltratepeel cycle. Vertically aligned silicon nanowires etched from recycled silicon wafers are captured in a polymer matrix that operates as Li þ gel-electrolyte and electrode separator and peeled off to make multiple battery devices out of a single wafer. Porous, electrically interconnected copper nanoshells are conformally deposited around the silicon nanowires to stabilize the electrodes over extended cycles and provide efficient current collection. Using the above developed process we demonstrate an operational full cell 3.4 V lithium-polymer silicon nanowire (LIPOSIL) battery which is mechanically flexible and scalable to large dimensions.polymer electrolyte | core-shell nanowires | energy storage | flexible electronics | waste management S ilicon is a promising anode material in lithium batteries due to its high specific capacity and low operation voltage (1). However, the major concern in using Si-based anodes is the huge volume expansion during the lithiation that leads to a fast degradation of the electrode material and a reduced life cycle of the battery with limited use in real life Li-ion applications. The advent of nanotechnology and successful incorporation of nanostructured materials in energy storage devices has further grown an interest in revisiting Si as an active anode material. The enhancement in the electrochemical performance of nanostructured Si anodes provides novel platforms for the ubiquitous presence of Si in Li-ion batteries (2-4). Through nanostructuring, the active Si pulverization was minimized yielding stable capacity retention. However, this was found insufficient to maintain a uniform electrical interface and adequate mechanical contact between the active Si particles and the conductive additives, calling for the development of new binder materials (5-7). Avoiding binders or conductive additives and enabling a direct contact between Si and the current collector is the other way to maintain the electrical conductivity and mechanical integrity of the electrode. This requires special designs of the current collector complying with the ensuing active material deposition. The optimal alternative so far is provided by the use of nanowires, nanotubes, or hierarchical assemblies directly grown, assembled, or bonded onto the current collector (8-12).Current collectors integrated with Si anodes have been successfully fabricated through chemical or physical vapor deposition methods, room temperature metal assisted chemical etching (MACE), as well as through various top-down methods (8,9,(12)(13)(14)(15). One of the major drawbacks of the respective configurations is the relatively low tap density of the Si nanostructures leading to low mass loading of active material and low volumetric capacities. Moreover, excess of current collector is usually employed in this configuration rendering them less attractive for high-throughput battery manufacturing (16). Low compactio...

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Section: Resultsmentioning

confidence: 99%

Roll up nanowire battery from silicon chips

Vlad

Reddy

Ajayan

et al. 2012

Proc. Natl. Acad. Sci. U.S.A.

122

106

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“…[44][45][46] NWs of inorganic materials are attractive choice for realising electronics for robotic skin applications. In particular, semiconducting NWs possess interesting electrical, optical, mechanical and electrochemical properties, which would be ideal for applications such as nanoelectronics, sensors, optoelectronics and photovoltaics applications.…”

Section: Nanowiresmentioning

confidence: 99%

New materials and advances in making electronic skin for interactive robots

et al. 2015

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Flexible electronics has huge potential to bring revolution in robotics and prosthetics as well as to bring about the next big evolution in electronics industry. In robotics and related applications, it is expected to revolutionise the way with which machines interact with humans, real-world objects and the environment. For example, the conformable electronic or tactile skin on robot's body, enabled by advances in flexible electronics, will allow safe robotic interaction during physical contact of robot with various objects. Developing a conformable, bendable and stretchable electronic system requires distributing electronics over large non-planar surfaces and movable components. The current research focus in this direction is marked by the use of novel materials or by the smart engineering of the traditional materials to develop new sensors, electronics on substrates that can be wrapped around curved surfaces. Attempts are being made to achieve flexibility/stretchability in e-skin while retaining a reliable operation. This review provides insight into various materials that have been used in the development of flexible electronics primarily for e-skin applications.

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“…For fabricating the a-IGZO/(aligned-SnO 2 -NW) composite TFTs, a contact-printing method was conducted to arrange the SnO 2 NWs in good alignment. [22][23][24] Finally, the Cr/Au electrodes for source (S) and drain (D) electrodes were completed by the typical photolithography, metallization, and lift-off process NWs are introduced into a-IGZO precursor and ultrasonically dispersed, so as to achieve a uniform composite precursor. Then a-IGZO/ (random-SnO 2 -NW) composite thin fi lms are obtained through a spin-coating approach.…”

Section: Doi: 101002/adma201401732mentioning

confidence: 99%

Transparent, High‐Performance Thin‐Film Transistors with an InGaZnO/Aligned‐SnO₂‐Nanowire Composite and their Application in Photodetectors

et al. 2014

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A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon.

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Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics

Cited by 204 publications

References 105 publications

Roll up nanowire battery from silicon chips

Roll up nanowire battery from silicon chips

New materials and advances in making electronic skin for interactive robots

Transparent, High‐Performance Thin‐Film Transistors with an InGaZnO/Aligned‐SnO₂‐Nanowire Composite and their Application in Photodetectors

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Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics

Cited by 204 publications

References 105 publications

Roll up nanowire battery from silicon chips

Roll up nanowire battery from silicon chips

New materials and advances in making electronic skin for interactive robots

Transparent, High‐Performance Thin‐Film Transistors with an InGaZnO/Aligned‐SnO2‐Nanowire Composite and their Application in Photodetectors

Contact Info

Product

Resources

About

Transparent, High‐Performance Thin‐Film Transistors with an InGaZnO/Aligned‐SnO₂‐Nanowire Composite and their Application in Photodetectors