Large-scale Graphene Production and Transfer for Industrial Applications

Abstract

Compared to chemically derived graphene (Gr), chemical deposition (CVD) grown Gr has better crystal quality and hence superior electrical properties, which render it applicable for next-generation electronic and applications including solar cells, , , sensors, etc. Though the excellent performance of CVD grown Gr based devices has been demonstrated on the lab scale, Industrial scale production of these devices is limited by reliable large-scale production and transfer of CVD grown Gr. In this review, we will summarize the latest developments on large scale CVD production of Gr and industrially applicable transfer methods.

Graphene/SOI-based self-powered Schottky barrier photodiode array

“…It should be noted that although the dimension of the graphene layer (employed as the common electrode) is limited by the small volume of our graphene growth setup, the technique presented here is compatible for the fabrication of industrial scale G/Si PDA structures, which require large scale graphene production and transfer processes. 13 For future studies, it might be also interesting to produce G/Si PDA devices with disconnected individual graphene electrodes on every single Si element in the array. In this case, disconnected and separated graphene electrodes can be laterally patterned on arrayed Si channels with the technique developed in Ref.…”

Preparation, properties, and applications of Bi2O2Se thin films: A review

“…To improve reproducibility and controllability, a bottom-up method is needed to synthesize high-quality and large-area 2D single-crystal thin films. So far, many methods have been used to prepare more stable and high-quality Bi 2 O 2 Se single crystal, such as chemical vapor deposition (CVD) [11,[31][32][33][34][35][36] , modified Bridgman method [22,37] , wet chemical synthesis, hydrothermal reactions [27,38] , and so on. The bottom-up method can be used to grow Bi 2 O 2 Se single crystal directly on the target substrate by precisely controlling the growth conditions.…”