Preparation, properties, and applications of Bi₂O₂Se thin films: A review

Abstract

Two-dimensional materials have shown great application potential in high-performance electronic devices because they are ultrathin, have an ultra-large specific surface area, high carrier mobility, efficient channel current regulation, and extraordinary integration. In addition to graphene, other types of 2D nanomaterials have also been studied and applied in photodetectors, solar cells, energy storage devices, and so on. Bi2O2Se is an emerging 2D semiconductor material with very high electron mobility, modest bandgap, near-ideal subthreshold swing, and excellent thermal and chemical stability. Even in a monolayer structure, Bi2O2Se has still exhibited efficient light absorption. In this mini review, the latest main research progresses on the preparation methods, electric structure, and the optical, mechanical, and thermoelectric properties of Bi2O2Se are summarized. The wide rang of applications in electronics and photoelectronic devices are then reviewed. This review concludes with a discussion of the existing open questions/challenges and future prospects for Bi2O2Se.

Review on synthetic approaches and PEC activity performance of bismuth binary and mixed-anion compounds for potential applications in marine engineering

“…Various research groups have already demonstrated the potential of Bi 2 O 2 Chbased electronic devices, with Bi 2 O 2 Ch FETs exhibiting high carrier mobility and a large driving current. 86,94,[102][103][104] Simple logic gates have been made from Bi 2 O 2 Ch. Besides, Bi 2 O 2 Ch is also an exceptional choice for infrared photodetectors due to its narrow bandgap and high mobility, [105][106][107][108][109] and its strong spin-orbit coupling effect and ferroelectricity contributing to a large thermoelectric ZT value.…”

Preparation and Performance Study of Photoconductive Detector Based on Bi2O2Se Film

“…Two-dimensional (2D) materials, due to their unique layer structures and high carrier mobility, have received much attention in the field of electronic and optoelectronic devices [1][2][3][4][5][6][7]. Various high-crystallinity 2D materials have been prepared and used to construct high-performance optoelectronic devices, such as MoS 2 , InSe, MoSe 2 , and so on [6][7][8][9][10][11].…”

“…Various high-crystallinity 2D materials have been prepared and used to construct high-performance optoelectronic devices, such as MoS 2 , InSe, MoSe 2 , and so on [6][7][8][9][10][11]. As a new Bi-based 2D semiconductor material with good stability under air conditions, Bi 2 O 2 Se possesses great potential for the construction of infrared photodetectors, phototransistors, and ultrafast lasers [4,5,8,10,12]. Bi 2 O 2 Se has a modest bandgap of 0.8 eV, high carrier mobility (450 cm 2 /(V•s) at room temperature) and concentration (>10 17 cm −3 ), and good thermal and chemical stability [3,4,8].…”

“…As a new Bi-based 2D semiconductor material with good stability under air conditions, Bi 2 O 2 Se possesses great potential for the construction of infrared photodetectors, phototransistors, and ultrafast lasers [4,5,8,10,12]. Bi 2 O 2 Se has a modest bandgap of 0.8 eV, high carrier mobility (450 cm 2 /(V•s) at room temperature) and concentration (>10 17 cm −3 ), and good thermal and chemical stability [3,4,8]. Compared with other 2D layered materials, the layers of Bi 2 O 2 Se are connected by relatively strong electrostatic forces.…”

“…In addition, due to this interlayered zipper-like structure, it exhibits many unique characteristics. However, high-quality and high-crystallinity Bi 2 O 2 Se nanosheets are mostly grown on mica substrate via the chemical vapor deposition (CVD) method [4,10,12,13]. The electrostatic interaction between Bi 2 O 2 Se and the mica substrate leads to difficulty when using transfer technology.…”